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1. CN112292750 - POLISHING HEAD, WAFER POLISHING DEVICE USING SAME, AND POLISHING METHOD

Office
China
Application Number 201980033238.5
Application Date 13.02.2019
Publication Number 112292750
Publication Date 29.01.2021
Publication Kind A
IPC
H01L 21/304
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304Mechanical treatment, e.g. grinding, polishing, cutting
B24B 37/30
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
37Lapping machines or devices; Accessories
27Work carriers
30for single side lapping of plane surfaces
B24B 37/32
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
37Lapping machines or devices; Accessories
27Work carriers
30for single side lapping of plane surfaces
32Retaining rings
CPC
B24B 37/32
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
37Lapping machines or devices; Accessories
27Work carriers
30for single side lapping of plane surfaces
32Retaining rings
B24B 37/30
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
37Lapping machines or devices; Accessories
27Work carriers
30for single side lapping of plane surfaces
B24B 57/02
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
57Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
02for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
H01L 21/67092
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67092Apparatus for mechanical treatment
B24B 7/228
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
7Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
20characterised by a special design with respect to properties of the material of non-metallic articles to be ground
22for grinding inorganic material, e.g. stone, ceramics, porcelain
228for grinding thin, brittle parts, e.g. semiconductors, wafers
B24B 37/107
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
37Lapping machines or devices; Accessories
04designed for working plane surfaces
07characterised by the movement of the work or lapping tool
10for single side lapping
105the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement
107in a rotary movement only, about an axis being stationary during lapping
Applicants SUMCO CORPORATION
胜高股份有限公司
Inventors NAKANO YUKI
中野裕生
SUGIMORI KATSUHISA
杉森胜久
KOZASA KAZUAKI
小佐佐和明
KAJIWARA JIRO
梶原治郎
YAMAMOTO KATSUTOSHI
山本胜利
KIHARA TAKAYUKI
木原誉之
TERAKAWA RYOYA
寺川良也
Agents 中国专利代理(香港)有限公司 72001
中国专利代理(香港)有限公司 72001
Priority Data 2018095300 17.05.2018 JP
Title
(EN) POLISHING HEAD, WAFER POLISHING DEVICE USING SAME, AND POLISHING METHOD
(ZH) 抛光头及使用其的晶片抛光装置及抛光方法
Abstract
(EN) To suppress fluctuations in polishing pressure at an outer circumferential section of a wafer, and increase flatness. A polishing head 10 of a wafer polishing device is provided with: a membrane head16 that can independently control a center section control pressure Pc pressing a center section of a wafer W, and an outer circumferential section control pressure Pe pressing an outer circumferential section of the wafer W; an outer ring 17 integrated with the membrane head 16 so as to configure the outer circumferential section of the membrane head 16; and a grounding type retainer ring 14 provided at an outer side of the membrane head 16. The membrane head 16 has a center section pressure chamber R1 of a single chamber structure that controls the center section control pressure Pc, and anouter circumferential section pressure chamber R2 that is provided above the center section pressure chamber R1, and that controls the outer circumferential section control pressure Pe. The position of a lower end of the outer ring 17 reaches at least a position of an inside bottom surface S1 of the center section pressure chamber R1, and the position of an upper end of the outer ring 17 reaches at least a position of an inside upper surface S2 of the center section pressure chamber R1.
(ZH) 本发明的课题在于抑制晶片外周部的抛光压力的起伏而实现高平坦化。其解决方案为,本发明的晶片抛光装置的抛光头(10)具备能够独立地控制用于按压晶片(W)的中心部的中心部控制压力(Pc)与用于按压晶片(W)的外周部的外周部控制压力(Pe)的膜头(16)、与该膜头(16)连为一体以构成膜头(16)的外周部的外环(17)及设置在膜头(16)的外侧的接地型保持器圈(14),膜头(16)具有控制中心部控制压力(Pc)的单室结构的中心部压力室(R1)及设置在中心部压力室(R1)的上方且控制外周部控制压力(Pe)的外周部压力室(R2),外环(17)的下端的位置至少到达中心部压力室(R1)的内侧底面(S1)的位置,外环(17)的上端的位置至少到达中心部压力室(R1)的内侧上表面(S2)的位置。