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1. CN112266251 - Preparation method of silicon nitride/titanium carbide ceramic material based on spark plasma sintering

Office
China
Application Number 202011180494.8
Application Date 29.10.2020
Publication Number 112266251
Publication Date 26.01.2021
Publication Kind A
IPC
C04B 35/565
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35Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
515based on non-oxides
56based on carbides
565based on silicon carbide
C04B 35/622
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35Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
622Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
CPC
C04B 35/565
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35Shaped ceramic products characterised by their composition
515based on non-oxide ceramics
56based on carbides ; or oxycarbides
565based on silicon carbide
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35Shaped ceramic products characterised by their composition
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C04B 2235/3843
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2235Aspects relating to ceramic starting mixtures or sintered ceramic products
02Composition of constituents of the starting material or of secondary phases of the final product
30Constituents and secondary phases not being of a fibrous nature
38Non-oxide ceramic constituents or additives
3817Carbides
3839Refractory metal carbides
3843Titanium carbides
C04B 2235/3217
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2235Aspects relating to ceramic starting mixtures or sintered ceramic products
02Composition of constituents of the starting material or of secondary phases of the final product
30Constituents and secondary phases not being of a fibrous nature
32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
3217Aluminum oxide or oxide forming salts thereof, e.g. bauxite, alpha-alumina
C04B 2235/3225
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2235Aspects relating to ceramic starting mixtures or sintered ceramic products
02Composition of constituents of the starting material or of secondary phases of the final product
30Constituents and secondary phases not being of a fibrous nature
32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
3224Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
3225Yttrium oxide or oxide-forming salts thereof
C04B 2235/5436
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2235Aspects relating to ceramic starting mixtures or sintered ceramic products
02Composition of constituents of the starting material or of secondary phases of the final product
50Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
54Particle size related information
5418expressed by the size of the particles or aggregates thereof
5436micrometer sized, i.e. from 1 to 100 micron
Applicants QILU UNIVERSITY OF TECHNOLOGY
齐鲁工业大学
Inventors XIAO GUANGCHUN
肖光春
ZHANG SHUAI
张帅
CHEN ZHAOQIANG
陈照强
XU CHONGHAI
许崇海
YI MINGDONG
衣明东
ZHANG JINGJIE
张静婕
Agents 济南圣达知识产权代理有限公司 37221
Title
(EN) Preparation method of silicon nitride/titanium carbide ceramic material based on spark plasma sintering
(ZH) 一种基于放电等离子烧结的氮化硅/碳化钛陶瓷材料制备方法
Abstract
(EN) The invention particularly relates to a preparation method of a silicon nitride/titanium carbide ceramic material based on spark plasma sintering. The silicon nitride-based ceramic material has good mechanical properties and stability, and the prepared high-performance Si3N4/SiC ceramic material is expected to be widely applied in the industrial field. The invention provides a preparation method of a Si3N4/TiC ceramic material based on spark plasma sintering, which comprises the following steps of by using alpha-Si3N4 as a matrix, TiC as a reinforcing phase and Al2O3 and Y2O3 as sintering aids, carrying out wet ball-milling, mixing, drying and spark plasma sintering at 1650-1750 DEG C for 20-35 minutes. The Si3N4/TiC ceramic material prepared by the method has good sintering compactness, and the bending strength, fracture toughness and hardness of the ceramic material are not lower than 700MPa, 6.1 MPa.m<1/2> and 13GPa.
(ZH) 本发明具体涉及一种基于放电等离子烧结的氮化硅/碳化钛陶瓷材料制备方法。氮化硅基陶瓷材料具有良好的机械性能及稳定性,制备高性能的Si3N4/SiC陶瓷材料有望在工业领域获得广泛的应用。本发明提供了一种基于放电等离子烧结的Si3N4/TiC陶瓷材料制备方法,以α‑Si3N4为基体,TiC为增强相,Al2O3和Y2O3为烧结助剂,经湿法球磨混料、干燥后进行放电等离子烧结,烧结温度1650‑1750℃,保温时间20‑35min。本发明制备的Si3N4/TiC陶瓷材料具有良好的烧结致密性,陶瓷材料的抗弯强度、断裂韧性和硬度不低于700MPa,6.1MPa·m1/2,13GPa。
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