(EN) The invention provides a semiconductor device and a manufacturing method thereof. The semiconductor device includes a group III nitride layer, a gate, a connection structure, and a gate bus. The gateis disposed over the group III nitride layer. The connection structure is disposed over the gate. The gate bus extends substantially parallel to the gate and is disposed over the connection structurefrom a top view perspective. The gate bus is electrically connected to the gate through the connection structure.
(ZH) 本公开提供了一种半导体装置和其制作方法。所述半导体装置包含III族氮化物层、栅极、连接结构和栅极总线。所述栅极安置在所述III族氮化物层之上。所述连接结构安置在所述栅极之上。所述栅极总线基本上平行于所述栅极延伸并且从俯视图角度看安置在所述连接结构之上。所述栅极总线通过所述连接结构电连接到所述栅极。