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1. CN111885316 - Image sensor pixel circuit, image sensor and depth camera

Office
China
Application Number 202010659009.9
Application Date 09.07.2020
Publication Number 111885316
Publication Date 03.11.2020
Publication Kind A
IPC
H04N 5/355
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors
351Control of the SSIS depending on the scene, e.g. brightness or motion in the scene
355Control of the dynamic range
H04N 5/359
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors
357Noise processing, e.g. detecting, correcting, reducing or removing noise
359applied to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
CPC
H04N 5/355
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors [SSIS]
351Control of the SSIS depending on the scene, e.g. brightness or motion in the scene
355Control of the dynamic range
H04N 5/359
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors [SSIS]
357Noise processing, e.g. detecting, correcting, reducing or removing noise
359applied to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
Applicants SHENZHEN AOCHEN PHOTOELECTRIC TECHNOLOGY CO., LTD.
深圳奥辰光电科技有限公司
Inventors WANG FEI
王飞
MA CHENG
马成
WANG ZHAOMIN
王兆民
WANG XINYANG
王欣洋
Agents 深圳汉世知识产权代理事务所(特殊普通合伙) 44578
Title
(EN) Image sensor pixel circuit, image sensor and depth camera
(ZH) 一种图像传感器像素电路、图像传感器及深度相机
Abstract
(EN) The invention discloses an image sensor pixel circuit comprising: a charge generation unit which is used for converting an incident optical signal into an electric signal and comprises a photodiode and a plurality of exposure control transistors; the charge storage unit which is connected with the charge generation unit and is configured to store the electric signal; the charge transmission unit which is connected with the charge storage unit and is configured to transmit the electric signal to the reading unit; a readout unit configured to transmit and read the electric signal of the charge storage unit as a signal of the pixel, wherein signals generated by the photodiodes respectively obtain a plurality of electric signals through a plurality of exposure control transistors, and chargesaccumulated by the photodiodes are alternately stored in corresponding charge storage units through the plurality of exposure control transistors. The pixel structure provided by the invention can support a global exposure mode and can reduce noise, so that high-precision and long-distance measurement can be met.
(ZH) 本发明公开了一种图像传感器像素电路,包括:电荷生成单元,用于将入射的光信号转换成电信号,其包括有光电二极管以及多个曝光控制晶体管;电荷存储单元,连接电荷生成单元,被配置为存储所述电信号;电荷传输单元,连接电荷存储单元,被配置为将电信号传输至读出单元;读出单元,被配置为将电荷存储单元的电信号作为像素传输以及读取像素的信号;其中,所述光电二极管产生的信号通过多个曝光控制晶体管分别得到多个电信号,通过多个曝光控制晶体管交替地将光电二极管累积的电荷存储至对应的电荷存储单元。本发明像素结构能够支持全局曝光模式,并且可降低噪声,从而可满足高精度、远距离的测量。
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