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1. CN111798911 - Voltage control method and circuit of anti-fuse memory array

Office
China
Application Number 202010661652.5
Application Date 10.07.2020
Publication Number 111798911
Publication Date 20.10.2020
Publication Kind A
IPC
G11C 17/16
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
17Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
14in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
16using electrically-fusible links
G11C 17/18
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
17Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
14in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
18Auxiliary circuits, e.g. for writing into memory
G11C 5/14
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
5Details of stores covered by group G11C11/63
14Power supply arrangements
CPC
G11C 17/16
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
17Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
14in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
16using electrically-fusible links
G11C 17/18
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
17Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
14in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
18Auxiliary circuits, e.g. for writing into memory
G11C 5/147
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
5Details of stores covered by G11C11/00
14Power supply arrangements
147Voltage reference generators, voltage and current regulators
Applicants NO.24 RESEARCH INSTITUTE OF CETC
中国电子科技集团公司第二十四研究所
Inventors WANG YAN
王妍
ZHANG PEIJIAN
张培健
XU MINGYUAN
徐鸣远
CHEN XIAN
陈仙
JIANG FEIYU
蒋飞宇
LIAO XIYI
廖希异
QIU SHENG
邱盛
ZHANG ZHENGYUAN
张正元
LI RUZHANG
李儒章
JIANG HEQUAN
蒋和全
DAI YONGHONG
戴永红
Agents 上海光华专利事务所(普通合伙) 31219
Title
(EN) Voltage control method and circuit of anti-fuse memory array
(ZH) 一种反熔丝存储器阵列的电压控制方法及电路
Abstract
(EN) The invention provides a voltage control method and circuit for an anti-fuse memory array. The voltage control method comprises the steps of: acquiring a storage data address, dividing the storage data address into a plurality of bit segments, and converting each bit segment into a group of control signals through a group of high-voltage level converters after decoding; accessing each group of control signals to one group of data selectors, sequentially connecting the plurality of groups of data selectors in series, outputting selection voltage input into the data selectors to an anti-fuse unit under the action of each group of control signals, and encoding or reading the anti-fuse unit corresponding to the storage data address is coded or read; wherein the selection voltage at least comprises an encoding selection voltage, a reading selection voltage and a non-specified anti-fuse unit selection voltage; according to the invention, programming/reading is realized, the number of tubes can be effectively reduced, and the layout area is saved.
(ZH) 本发明提出一种反熔丝存储器阵列的电压控制方法及电路,包括获取存储数据地址,将所述存储数据地址划分为多个位段,每个所述位段经过译码后,通过一组高电压电平转换器转换为一组控制信号;每组所述控制信号接入一组数据选择器,通过多组所述数据选择器依次串接,在每组所述控制信号作用下将输入所述数据选择器的选择电压输出至反熔丝单元,并对所述存储数据地址对应的反熔丝单元进行编码或读取;其中,所述选择电压至少包括:编码选择电压、读取选择电压、非指定反熔丝单元选择电压;本发明在实现编程/读取的同时,可有效减少管子的数量,节约版图面积。
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