(EN) A control method for recombination lifetimes includes a step of controlling the carrier recombination lifetime in a silicon single crystal substrate by performing a preparation step of preparing a silicon single crystal substrate from a nitrogen-added silicon single crystal grown by the FZ method, a heating step A of performing heat application, a particle beam irradiation step of irradiating thesilicon single crystal substrate with a particle beam, and a heating step B of heating the silicon single crystal substrate, thereby controlling the recombination lifetime of carriers of the silicon single crystal substrate. The method is characterized in that the nitrogen concentration Cn in the silicon single crystal substrate is adjusted by causing the nitrogen in the silicon single crystal substrate to diffuse outward in the heating step A depending on the oxygen concentration Co in the silicon single crystal substrate prepared in the preparation step, and subsequently, the particle beam irradiation step is performed. Thus, provided is the control method for recombination lifetimes which can ensure less variability in recombination lifetimes originating in nitrogen-added FZ silicon single crystal substrates, and can control recombination lifetimes with a high degree of accuracy.
(ZH) 本发明提供一种复合寿命的控制方法，其通过进行由利用FZ法培养的掺氮硅单晶准备硅单晶基板的工序；实施热处理的热处理工序A；对硅单晶基板照射粒子束的粒子束照射工序；及对硅单晶基板进行热处理的热处理工序B，从而控制硅单晶基板的载流子的复合寿命，该方法的特征在于，在热处理工序A中，根据在准备工序中准备的硅单晶基板的氧浓度Co，使硅单晶基板中的氮向外扩散，从而调节硅单晶基板的氮浓度Cn，然后，进行粒子束照射工序。由此，能够确实地减小起因于掺氮FZ硅单晶基板的复合寿命的偏差，能够以高精度控制复合寿命。
