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1. CN111384270 - Preparation method of quantum dot light-emitting diode

Office
China
Application Number 201811639610.0
Application Date 29.12.2018
Publication Number 111384270
Publication Date 07.07.2020
Grant Number 111384270
Grant Date 30.07.2021
Publication Kind B
IPC
H01L 51/50
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
H01L 51/56
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
56Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
CPC
H01L 51/0005
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
0001Processes specially adapted for the manufacture or treatment of devices or of parts thereof
0002Deposition of organic semiconductor materials on a substrate
0003using liquid deposition, e.g. spin coating
0004using printing techniques, e.g. ink-jet printing, screen printing
0005ink-jet printing
H01L 51/0029
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51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
0001Processes specially adapted for the manufacture or treatment of devices or of parts thereof
0029Special provisions for controlling the atmosphere during processing
H01L 51/502
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
5012Electroluminescent [EL] layer
502comprising active inorganic nanostructures, e.g. luminescent quantum dots
H01L 51/50
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
H01L 51/56
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
56Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
Applicants TCL CORPORATION
TCL科技集团股份有限公司
Inventors ZHANG JIE
张节
XIANG CHAOYU
向超宇
Agents 深圳中一联合知识产权代理有限公司 44414
Title
(EN) Preparation method of quantum dot light-emitting diode
(ZH) 量子点发光二极管的制备方法
Abstract
(EN)
The invention provides a preparation method of a quantum dot light-emitting diode, which comprises the following steps: providing a substrate, placing the substrate in an inert atmosphere containing active gas, and printing quantum dot ink on the surface of the substrate to prepare a quantum dot light-emitting layer. According to the preparation method of the quantum dot light-emitting diode, theink-jet printing film-forming atmosphere is changed, the quantum dot light-emitting layer is prepared in the inert atmosphere containing the active gas, and the device efficiency of the quantum dot light-emitting diode can be improved while the printability of quantum dot ink is ensured.

(ZH)
本发明提供了一种量子点发光二极管的制备方法,包括以下步骤:提供基板,将所述基板置于含有活性气体的惰性气氛中,在所述基板表面打印量子点墨水,制备量子点发光层。本发明提供的量子点发光二极管的制备方法,改变喷墨打印成膜氛围,在含有活性气体的惰性气氛中制备量子点发光层,可以在保证量子点墨水打印性的同时,提高量子点发光二极管的器件效率。

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EP2019903010This application is not viewable in PATENTSCOPE because the national phase entry has not been published yet or the national entry is issued from a country that does not share data with WIPO or there is a formatting issue or an unavailability of the application.