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1. CN111384269 - Quantum dot light-emitting diode and preparation method thereof

Office
China
Application Number 201811639181.7
Application Date 29.12.2018
Publication Number 111384269
Publication Date 07.07.2020
Grant Number 111384269
Grant Date 03.08.2021
Publication Kind B
IPC
H01L 51/50
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
H01L 51/56
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
56Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
CPC
H01L 51/502
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
5012Electroluminescent [EL] layer
502comprising active inorganic nanostructures, e.g. luminescent quantum dots
H01L 51/56
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
56Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
H01L 51/50
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
Applicants TCL CORPORATION
TCL科技集团股份有限公司
Inventors ZHANG JIE
张节
XIANG CHAOYU
向超宇
Agents 深圳中一联合知识产权代理有限公司 44414
Title
(EN) Quantum dot light-emitting diode and preparation method thereof
(ZH) 量子点发光二极管及其制备方法
Abstract
(EN)
The invention provides a preparation method of a quantum dot light-emitting diode, which comprises the following steps: providing a substrate provided with a bottom electrode, and preparing a quantumdot light-emitting layer on the substrate; and after a first compound solution is deposited on the surface of the quantum dot light-emitting layer, carrying out illumination treatment, wherein the first compound is a compound which can be photolyzed into ions after illumination treatment.

(ZH)
本发明提供了一种量子点发光二极管的制备方法,包括以下步骤:提供设置有底电极的基板,在所基板上制备量子点发光层;在所述量子点发光层表面沉积第一化合物溶液后,进行光照处理,其中,所述第一化合物为经光照处理后能光解为离子的化合物。

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