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1. CN111370475 - Trench gate IGBT and device

Office China
Application Number 201811589486.1
Application Date 25.12.2018
Publication Number 111370475
Publication Date 03.07.2020
Publication Kind A
IPC
H01L 29/739
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
70Bipolar devices
72Transistor-type devices, i.e. able to continuously respond to applied control signals
739controlled by field effect
H01L 29/423
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40Electrodes
41characterised by their shape, relative sizes or dispositions
423not carrying the current to be rectified, amplified or switched
CPC
H01L 29/4236
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
40Electrodes ; ; Multistep manufacturing processes therefor
41characterised by their shape, relative sizes or dispositions
423not carrying the current to be rectified, amplified or switched
42312Gate electrodes for field effect devices
42316for field-effect transistors
4232with insulated gate
42356Disposition, e.g. buried gate electrode
4236within a trench, e.g. trench gate electrode, groove gate electrode
H01L 29/42368
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
40Electrodes ; ; Multistep manufacturing processes therefor
41characterised by their shape, relative sizes or dispositions
423not carrying the current to be rectified, amplified or switched
42312Gate electrodes for field effect devices
42316for field-effect transistors
4232with insulated gate
42364characterised by the insulating layer, e.g. thickness or uniformity
42368the thickness being non-uniform
H01L 29/7397
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
70Bipolar devices
72Transistor-type devices, i.e. able to continuously respond to applied control signals
739controlled by field-effect, ; e.g. bipolar static induction transistors [BSIT]
7393Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
7395Vertical transistors, e.g. vertical IGBT
7396with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
7397and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
H01L 29/423
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
40Electrodes ; ; Multistep manufacturing processes therefor
41characterised by their shape, relative sizes or dispositions
423not carrying the current to be rectified, amplified or switched
H01L 29/739
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
70Bipolar devices
72Transistor-type devices, i.e. able to continuously respond to applied control signals
739controlled by field-effect, ; e.g. bipolar static induction transistors [BSIT]
Applicants GUANGDONG MIDEA WHITE ELECTRICAL APPLIANCE TECHNOLOGY INNOVATION CENTER CO., LTD.
广东美的白色家电技术创新中心有限公司
MIDEA GROUP CO., LTD.
美的集团股份有限公司
Inventors LAN HAO
兰昊
FENG YUXIANG
冯宇翔
Agents 北京路浩知识产权代理有限公司 11002
北京路浩知识产权代理有限公司 11002
Title
(EN) Trench gate IGBT and device
(ZH) 沟槽栅IGBT及装置
Abstract
(EN)
The embodiment of the invention provides a trench gate IGBT and a trench gate IGBT device. According to the invention, the trench gate IGBT in the prior art is improved, and the improved trench gate IGBT comprises an emitter, a p well region, a gate, a gate oxidation layer, a drift region and a back collector electrode, wherein the gate is located in a trench, the gate is isolated from the emitter, the p well region and the drift region by the gate oxidation layer, the trench is arranged in a substrate, and a plurality of recesses are formed in the boundary of the trench and the drift region;and in the switching process of the trench gate IGBT, a plurality of recessed gate oxidation layers arranged on the interface of the side surface of the trench and the drift region can bind and accumulate electron charges, so that the conduction capability is improved, the technical problem of over-high switching power consumption of the trench gate IGBT in the prior art is solved, and the beneficial effect of reducing the switching power consumption of the trench gate IGBT is achieved.

(ZH)
本发明实施例提供沟槽栅IGBT及装置,对现有技术中沟槽栅IGBT进行改进,所述改进后的沟槽栅IGBT包括发射极、p阱区、栅极、栅极氧化层、漂移区和背部集电极,所述栅极位于沟槽内,栅极与发射极、p阱区和漂移区之间由栅极氧化层隔离,所述沟槽设置在衬底内部,所述沟槽与漂移区的边界具有多个凹陷。在沟槽栅IGBT开关过程中,所述沟槽的侧面与漂移区的界面上具有多个凹陷栅极氧化层,可以束缚和积累电子电荷,从而提高导通能力,解决现有技术中沟槽栅IGBT的开关功耗过高的技术问题,以起到减小沟槽栅IGBT的开关功耗的有益效果。

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