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1. CN111276476 - 半导体器件制备方法

Office China
Application Number 201811478102.9
Application Date 05.12.2018
Publication Number 111276476
Publication Date 12.06.2020
Publication Kind A
IPC
H01L 27/02
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H01L 21/8249
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8248Combination of bipolar and field-effect technology
8249Bipolar and MOS technology
CPC
H01L 21/8249
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8248Combination of bipolar and field-effect technology
8249Bipolar and MOS technology
H01L 27/02
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
Applicants 无锡华润上华科技有限公司
Inventors 廖远宝
Agents 广州华进联合专利商标代理有限公司 44224
Title
(ZH) 半导体器件制备方法
Abstract
(ZH)
本申请涉及一种半导体器件制备方法,包括:提供包括原胞区和非原胞区的半导体衬底,在非原胞区的半导体衬底上依次形成隔离介质层和具有第一导电类型掺杂的半导体层;以半导体层和隔离介质层为掩膜进行第一导电类型阱注入,在原胞区形成阱区;在阱区内形成工作结构,在半导体层内形成保护结构;在工作结构和保护结构上形成层间介质层,并在层间介质层内形成接触孔,在层间介质层上形成与接触孔连接的金属互连层,通过金属互连层和接触孔连接工作结构和保护结构。通过利用半导体层和隔离介质层作为掩膜进行自对准阱注入,可以降低保护结构的厚度,从而增加保护结构上方层间介质层的厚度,增强保护结构上方层间介质层的隔离作用。

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