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1. CN111244293 - 一种量子点发光二极管及其制备方法

Office China
Application Number 201811432326.6
Application Date 28.11.2018
Publication Number 111244293
Publication Date 05.06.2020
Publication Kind A
IPC
H01L 51/50
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
H01L 51/54
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
54Selection of materials
H01L 51/56
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
56Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
Applicants TCL集团股份有限公司
Inventors 吴劲衡
吴龙佳
何斯纳
Agents 深圳市君胜知识产权代理事务所(普通合伙) 44268
深圳市君胜知识产权代理事务所(普通合伙) 44268
Title
(ZH) 一种量子点发光二极管及其制备方法
Abstract
(ZH)
本发明公开一种量子点发光二极管及其制备方法,其中,所述量子点发光二极管包括空穴传输层,所述空穴传输层材料包括PAMAM树形分子以及与所述PAMAM树形分子上的氨基结合的金属氧化物纳米颗粒。由于PAMAM树形分子是一种高度支化的树状化合物,其分子链呈不规则排列,适合用于改进金属氧化物纳米颗粒在溶剂中的分散性,提高其成膜性能;所述PAMAM树形分子拥有大量的氨基,可与金属氧化物纳米颗粒形成一个或多个配位键并牢固连接,这使得所述PAMAM树形分子可以以架桥方式连接成膜后的金属氧化物纳米颗粒,所述PAMAM树形分子上的碳支链可以提高金属氧化物纳米颗粒相互之间的电荷传输效率,进而提高量子点发光二极管的发光效率。

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