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1. CN111243654 - 一种闪存芯片及其校准方法和装置

Office China
Application Number 201811438979.5
Application Date 28.11.2018
Publication Number 111243654
Publication Date 05.06.2020
Publication Kind A
IPC
G11C 29/26
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
29Checking stores for correct operation; Testing stores during standby or offline operation
04Detection or location of defective memory elements
08Functional testing, e.g. testing during refresh, power-on self testing or distributed testing
12Built-in arrangements for testing, e.g. built-in self testing
18Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
26Accessing multiple arrays
G11C 29/14
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
29Checking stores for correct operation; Testing stores during standby or offline operation
04Detection or location of defective memory elements
08Functional testing, e.g. testing during refresh, power-on self testing or distributed testing
12Built-in arrangements for testing, e.g. built-in self testing
14Implementation of control logic, e.g. test mode decoders
Applicants 北京知存科技有限公司
Inventors 王绍迪
Title
(ZH) 一种闪存芯片及其校准方法和装置
Abstract
(ZH)
本发明提供一种闪存芯片及其校准方法和装置,可利用闪存单元的可调权重等级对该闪存芯片中的工作阵列进行校准,具体可通过设置用于校准工作阵列的至少一个参考阵列,并且参考阵列中的闪存单元的数量大于或等于该闪存单元的可调权重等级N;参考阵列的N个闪存单元的初始权重值与闪存单元的N级可调权重一一对应,多余的闪存单元作为冗余单元备用;校准时,根据参考阵列中闪存单元的实时权重值、初始权重值校准工作阵列中闪存单元的实时权重值,以此实现工作阵列中闪存单元权重的离线更新校准,补偿了漏电现象对闪存单元权重的影响,能够提高存储数据的精度。

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