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1. CN111223933 - 一种提高GaN增强型MOSFET阈值电压的新型外延层结构

Office China
Application Number 201811422595.4
Application Date 27.11.2018
Publication Number 111223933
Publication Date 02.06.2020
Publication Kind A
IPC
H01L 29/78
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
H01L 29/423
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40Electrodes
41characterised by their shape, relative sizes or dispositions
423not carrying the current to be rectified, amplified or switched
H01L 29/06
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/205
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
12characterised by the materials of which they are formed
20including, apart from doping materials or other impurities, only AIIIBV compounds
201including two or more compounds
205in different semiconductor regions
Applicants 北京大学
Inventors 王茂俊
陶明
Agents 北京万象新悦知识产权代理有限公司 11360
Title
(ZH) 一种提高GaN增强型MOSFET阈值电压的新型外延层结构
Abstract
(ZH)
本发明公开了一种提高GaN增强型MOSFET阈值电压的新型外延层结构及基于该结构的器件制备方法,涉及电力电子器件及功率开关领域。新型结构自下而上包括:衬底、GaN缓冲层、本征GaN层、Mg掺杂P型GaN层、GaN沟道层和AlGaN势垒层。在该结构上用凹槽栅工艺形成钝化层、凹槽栅、平面隔离、绝缘栅介质层、欧姆接触以及栅和源漏欧姆金属电极即可制备出高阈值电压增强型GaN MOSFET。本发明在本征GaN层中插入P型GaN层,将其完全刻蚀后,沟道反型区域除了本征GaN层还有P型GaN层,由此可以极大提高器件的阈值电压。有利于解决GaN增强型器件在实际应用中的可靠性问题,扩宽了其在功率开关领域的应用。

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