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1. CN111223999 - 一种量子点发光二极管及其制备方法

Office China
Application Number 201811419198.1
Application Date 26.11.2018
Publication Number 111223999
Publication Date 02.06.2020
Publication Kind A
IPC
H01L 51/50
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
H01L 51/52
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
52Details of devices
H01L 51/56
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
56Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
Applicants TCL集团股份有限公司
Inventors 梁柱荣
曹蔚然
钱磊
Agents 深圳市君胜知识产权代理事务所(普通合伙) 44268
深圳市君胜知识产权代理事务所(普通合伙) 44268
Title
(ZH) 一种量子点发光二极管及其制备方法
Abstract
(ZH)
本发明公开一种量子点发光二极管及其制备方法,其中所述量子点发光二极管,包括阳极、量子点发光层及阴极,所述量子点发光层设置在所述阳极与所述阴极之间,还包括设置于所述阳极与所述量子点发光层之间的第一修饰层,所述第一修饰层包括PAMAM,所述PAMAM中掺杂有过渡金属阳离子。本发明通过将第一修饰层设置在阳极与量子点发光层之间,用于修饰阳极,可以提高阳极的功函数,从而提高空穴的注入效果,进而提高器件的性能。本发明还可以通过将第二修饰层设置在阴极与量子点发光层之间,用于修饰阴极,经修饰后的阴极的功函数会有所降低,从而提高电子注入效果,进而提高器件的性能。

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