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1. CN110012409 - MEMS microphone manufacturing method

Office China
Application Number 201811651259.7
Application Date 31.12.2018
Publication Number 110012409
Publication Date 12.07.2019
Publication Kind A
IPC
H04R 31/00
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
RLOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
31Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
H04R 19/04
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
RLOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
19Electrostatic transducers
04Microphones
H04R 19/00
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
RLOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
19Electrostatic transducers
CPC
H04R 19/005
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
RLOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
19Electrostatic transducers
005using semiconductor materials
H04R 19/04
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
RLOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
19Electrostatic transducers
04Microphones
H04R 31/00
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
RLOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
31Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
H04R 31/003
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
RLOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
31Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
003for diaphragms or their outer suspension
H04R 2201/003
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
RLOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
2201Details of transducers, loudspeakers or microphones covered by H04R1/00 but not provided for in any of its subgroups
003Mems transducers or their use
H04R 2499/11
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
RLOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
2499Aspects covered by H04R or H04S not otherwise provided for in their subgroups
10General applications
11Transducers incorporated or for use in hand-held devices, e.g. mobile phones, PDA's, camera's
Applicants AAC TECHNOLOGIES (SINGAPORE) CO., LTD.
瑞声科技(新加坡)有限公司
Inventors MENG ZHENKUI
孟珍奎
LIU ZHENGYAN
刘政谚
Agents 广东广和律师事务所 44298
Title
(EN) MEMS microphone manufacturing method
(ZH) MEMS麦克风制造方法
Abstract
(EN)
The invention provides an MEMS microphone manufacturing method, and the method comprises the following steps: selecting a substrate, and preparing a first vibrating diaphragm structure on a first surface of the substrate; preparing a backboard structure at an interval on the side surface, opposite to the first surface of the substrate, of the first vibrating diaphragm structure, wherein a first gap is formed between the first vibrating diaphragm structure and the backboard structure; preparing a second vibrating diaphragm structure on the side surface, opposite to the first vibrating diaphragmstructure, of the back plate structure at intervals, wherein a second gap is formed between the second vibrating diaphragm structure and the back plate structure; preparing an electrode on the side surface, opposite to the backboard structure, of the second vibrating diaphragm structure; and etching a second surface, opposite to the first surface, of the substrate to form a back cavity.

(ZH)
本发明提出一种MEMS麦克风的制备方法,包括如下步骤:选择基底,在所述基底的第一表面上制备第一振膜结构;在所述第一振膜结构的与所述基底的第一表面相对的侧面间隔制备背板结构,所述第一振膜结构与所述背板结构之间具有第一间隙;在所述背板结构的与所述第一振膜结构相对的侧面间隔制备第二振膜结构,所述第二振膜结构与所述背板结构之间具有第二间隙;在所述第二振膜结构的与所述背板结构相对的侧面制备电极;刻蚀所述基底的与所述第一表面相对的第二表面,形成背腔。

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