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1. CN109979996 - Semimetal/semiconductor Schottky junction, method for fabricating same, and Schottky diode

Office China
Application Number 201910237587.0
Application Date 27.03.2019
Publication Number 109979996
Publication Date 05.07.2019
Publication Kind A
IPC
H01L 29/47
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40Electrodes
43characterised by the materials of which they are formed
47Schottky barrier electrodes
H01L 21/285
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/268158
283Deposition of conductive or insulating materials for electrodes
285from a gas or vapour, e.g. condensation
H01L 29/872
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
86controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched
861Diodes
872Schottky diodes
CPC
H01L 21/28581
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
283Deposition of conductive or insulating materials for electrodes ; conducting electric current
285from a gas or vapour, e.g. condensation
28506of conductive layers
28575on semiconductor bodies comprising AIIIBV compounds
28581Deposition of Schottky electrodes
H01L 29/475
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
40Electrodes ; ; Multistep manufacturing processes therefor
43characterised by the materials of which they are formed
47Schottky barrier electrodes
475on AIII-BV compounds
H01L 29/872
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
86controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
861Diodes
872Schottky diodes
Applicants NANJING UNIVERSITY
南京大学
Inventors LU HONG
芦红
DING YUANFENG
丁元丰
ZHANG KEDONG
张克冬
Agents 北京高沃律师事务所 11569
Title
(EN) Semimetal/semiconductor Schottky junction, method for fabricating same, and Schottky diode
(ZH) 一种半金属/半导体肖特基结及其制备方法和肖特基二极管
Abstract
(EN)
The invention relates to the field of electronic materials, and in particular to a semimetal/semiconductor Schottky junction, a method for fabricating the same, and a Schottky diode. The semimetal/semiconductor Schottky junction comprises a semiconductor layer and a semimetal layer, wherein a Schottky contact is formed between the semiconductor layer and the semimetal layer; and a compound formingthe semimetal layer is a compound composed of a rare earth element and a group VA element. The semimetal/semiconductor Schottky junction has good thermal stability at an interface between the semiconductor layer and the semimetal layer. The Schottky diode based on the semimetal/semiconductor Schottky junction has an ideal factor of about 1.05, noise equivalent power that can be reduced to the order of pW/Hz1/2 or even sub-pW/Hz1/2, and sensitive detection performance.

(ZH)
本发明涉及电子材料技术领域,具体涉及一种半金属/半导体肖特基结及其制备方法和肖特基二极管。本发明提供的半金属/半导体肖特基结,包括半导体层和半金属层,所述半导体层和半金属层之间形成肖特基接触;其中,形成所述半金属层的化合物为稀土元素与VA族元素组成的化合物。本发明提供的半金属/半导体肖特基结中半导体层和半金属层的界面热稳定性良好,基于所述半金属/半导体肖特基结的肖特基二极管,理想因子约为1.05,噪声等效功率可降低至pW/Hz1/2甚至亚pW/Hz1/2量级,具有更灵敏的探测性能。

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