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1. CN109860235 - Preparation method of array substrate, array substrate, display panel and display device

Office China
Application Number 201811477023.6
Application Date 05.12.2018
Publication Number 109860235
Publication Date 07.06.2019
Publication Kind A
IPC
H01L 27/32
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
32with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes
H01L 27/12
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
H01L 21/77
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
Applicants WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
武汉华星光电半导体显示技术有限公司
Inventors XIANG MING
向明
Agents 深圳翼盛智成知识产权事务所(普通合伙) 44300
Title
(EN) Preparation method of array substrate, array substrate, display panel and display device
(ZH) 阵列基板的制备方法、阵列基板、显示面板和显示装置
Abstract
(EN)
The embodiment of the invention discloses a preparation method of an array substrate, an array substrate, a display panel and a display device. In the embodiment of the invention, a gate insulation layer at the upper portion of a channel region is doped with fluorine atoms, and a fluorine-containing inorganic layer can absorb hydrogen atoms to block the hydrogen atoms to be diffused downwards to enter a metal-oxide semiconductor so as to avoid influence on the electricity of a thin film transistor. The metal-oxide semiconductor as the bottom electrode of a capacitor can still receive hydrogenatoms to become a conductor, the conductor and the metal gate layer forms the capacitor, and the gate insulation layer at the upper portion of the channel region of the thin film transistor is subjected to fluorine atom doping by only employing one type of metal as a metal gate layer so as to simplify the technological process and reduce the production cost.

(ZH)
本发明实施例公开了一种阵列基板的制备方法、阵列基板、显示面板和显示装置。本发明实施例中将沟道区上方的栅极绝缘层掺杂氟原子,由于含氟的无机层能够吸收氢原子,因此能够阻挡氢原子向下扩散进入金属氧化物半导体,从而避免影响薄膜晶体管的电性。另一方面,作为电容下电极的金属氧化物半导体仍能接受氢原子从而成为导体,与金属栅极层组成电容,通过对薄膜晶体管沟道区上方的栅极绝缘层进行氟原子掺杂,仅需使用一种金属作为金属栅极层,从而简化了工艺流程,降低了生产成本。

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