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1. CN109786418 - Micro light-emitting diode display panel and display device

Office
China
Application Number 201811606193.X
Application Date 26.12.2018
Publication Number 109786418
Publication Date 21.05.2019
Grant Number 109786418
Grant Date 04.06.2021
Publication Kind B
IPC
H01L 27/15
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
15including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 27/146
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
CPC
H01L 27/146
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
H01L 27/15
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
15including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
Applicants HKC CO., LTD.
惠科股份有限公司
Inventors ZHUO ENZONG
卓恩宗
YANG FENGYUN
杨凤云
Agents 深圳市世纪恒程知识产权代理事务所 44287
Title
(EN) Micro light-emitting diode display panel and display device
(ZH) 微发光二极管显示面板和显示装置
Abstract
(EN)
The invention discloses a micro light-emitting diode display panel and a display device. The micro light-emitting diode display panel comprises an upper substrate, a lower substrate, an upper electrode, a lower electrode, a first micro light-emitting diode, a second micro light-emitting diode, a third micro light-emitting diode and an image sensor array, wherein the upper substrate and the lower substrate are arranged in a spacing mode in a first direction; the upper electrode is arranged at the side, close to the lower substrate, of the upper substrate, and the lower electrode is arranged atthe side, close to the upper substrate, of the lower substrate; and the first micro light-emitting diode, the second micro light-emitting diode, the third micro light-emitting diode and the image sensor array are all arranged between the upper electrode and the lower electrode, and the first micro light-emitting diode, the second micro light-emitting diode, the third micro light-emitting diode andthe image sensor array are distributed in a spacing mode along a second direction. The micro light-emitting diode display panel has a scanning function in addition to excellent display performance.

(ZH)
本发明公开一种微发光二极管显示面板和显示装置,其中,微发光二极管显示面板包括:上基板、下基板、上电极、下电极,第一微发光二极管、第二微发光二极管和第三微发光二极管以及图像传感器阵列,其中,上基板和下基板在第一方向上间隔设置;上电极设于上基板的靠近下基板的一侧,下电极设于下基板的靠近上基板的一侧;第一微发光二极管、第二微发光二极管、第三微发光二极管和图像传感器阵列均设于上电极和下电极之间,且第一微发光二极管、第二微发光二极管、第三微发光二极管和图像传感器阵列沿第二方向间隔排布。本发明提出的微发光二极管显示面板除了具备优异的显示性能外,还具有扫描功能。

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