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1. CN109755159 - Dry etching machine table and method

Office
China
Application Number 201811646355.2
Application Date 29.12.2018
Publication Number 109755159
Publication Date 14.05.2019
Grant Number 109755159
Grant Date 02.02.2021
Publication Kind B
IPC
H01L 21/67
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01J 37/32
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes
CPC
H01J 37/32
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
H01L 21/67
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
Applicants WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
武汉华星光电技术有限公司
Inventors GAO PENGFEI
高鹏飞
DING DING
丁玎
Agents 深圳翼盛智成知识产权事务所(普通合伙) 44300
Title
(EN) Dry etching machine table and method
(ZH) 干法刻蚀机台及干法刻蚀方法
Abstract
(EN)
The invention provides a dry etching machine table and method. The dry etching machine table comprises a processing cavity for etching a base plate, the processing cavity comprises a bottom plate, a lifting part, a rotating part and a bearing part, a base plate fixing device is arranged on the bearing part, during dry etching, the lifting part and the rotating part are adjusted to enable the etching surface of the base plate to face downwards, etching plasma is released from air holes in the bottom plate and upwards diffused to the etching surface, and through the dry etching machine table, the situation that impurities at the top and the side walls of the processing cavity fall to the etching surface in the etching process, and consequently, the etching quality is affected can be prevented. The invention further provides the dry etching method, the dry etching method comprises the step that the dry etching machine table is used for dry etching of the base plate, and through the dry etching method, the situation that the impurities at the top and the side walls of the processing cavity fall to the etching surface in the etching process, and consequently, the etching quality is affected can be avoided.

(ZH)
本发明提供了一种干法刻蚀机台及干法刻蚀方法,所述干法刻蚀机台包括用于对基板进行刻蚀的制程腔,所述制程腔包括底板、升降部件、转动部件和承载部件,所述承载部件上设置有基板固定装置,进行干法刻蚀时,调整升降部件和转动部件,使基板的刻蚀面朝下,刻蚀用等离子体从底板上的气孔中释放并向上扩散至刻蚀面,该干法刻蚀机台可防止刻蚀过程中制程腔顶部和侧壁的杂质掉落至刻蚀面而影响刻蚀质量;本发明还提供了一种干法刻蚀方法,包括使用上述干法刻蚀机台对基板进行干法刻蚀的步骤,该方法可避免刻蚀过程中制程腔顶部和侧壁的杂质掉落至刻蚀面而影响刻蚀质量。

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