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1. CN208819876 - Novel IGBT half-bridge module structure

Office China
Application Number 201821972731.2
Application Date 28.11.2018
Publication Number 208819876
Publication Date 03.05.2019
Publication Kind U
IPC
H01L 25/07
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
04the devices not having separate containers
07the devices being of a type provided for in group H01L29/78
H01L 23/498
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
488consisting of soldered or bonded constructions
498Leads on insulating substrates
CPC
H01L 2224/0603
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
02Bonding areas; Manufacturing methods related thereto
04Structure, shape, material or disposition of the bonding areas prior to the connecting process
06of a plurality of bonding areas
0601Structure
0603Bonding areas having different sizes, e.g. different heights or widths
H01L 2224/49111
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
49of a plurality of wire connectors
491Disposition
4911the connectors being bonded to at least one common bonding area, e.g. daisy chain
49111the connectors connecting two common bonding areas, e.g. Litz or braid wires
H01L 2224/49175
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
49of a plurality of wire connectors
491Disposition
4912Layout
49175Parallel arrangements
Applicants YANTAI TAIXIN ELECTRONIC TECHNOLOGY CO., LTD.
烟台台芯电子科技有限公司
Inventors ZANG TIANCHENG
臧天程
ZHANG RU
张茹
JIANG WEIBIN
姜维宾
JIN HAO
金浩
AN YONG
安勇
Title
(EN) Novel IGBT half-bridge module structure
(ZH) 一种新型IGBT半桥模块结构
Abstract
(EN)
The utility model relates to a novel IGBT half-bridge module structure. The IGBT half-bridge module comprises a copper substrate. A left DBC and a right DBC are formed on the copper substrate. a leftIGBT chip and a left FRD chip are arranged on the left DBC; the right-path DBC is provided with a right-path IGBT chip and a right-path FRD chip, the left-path DBC on the outer side of the left-path IGBT chip is provided with a left-path chip solder mask layer, and the left-path chip solder mask layer wraps two corners of the left-path IGBT chip; a right-path chip solder mask layer is arranged onthe right-path DBC on the outer side of the right-path IGBT chip, and the right-path chip solder mask layer wraps the two corners of the right-path IGBT chip. According to the utility model, solder paste is prevented from overflowing after being melted, the risk of breakdown and short circuit caused by too close grid leads and emitter leads is avoided, the use of a double-pin terminal is satisfied, the gravity center of the power terminal is stabilized, and the void ratio between the DBC and the copper substrate is improved.

(ZH)
本实用新型涉及一种新型IGBT半桥模块结构,IGBT半桥模块包括铜基板,所述铜基板上形成有左路DBC和右路DBC,所述左路DBC上设有左路IGBT芯片和左路FRD芯片,所述右路DBC上设有右路IGBT芯片和右路FRD芯片,所述左路IGBT芯片外侧的左路DBC设有左路芯片阻焊层,所述左路芯片阻焊层将所述左路IGBT芯片的两个角部包裹;所述右路IGBT芯片外侧的右路DBC设有右路芯片阻焊层,所述右路芯片阻焊层将所述右路IGBT芯片的两个角部包裹。本实用新型避免锡膏融化后外溢,避免栅极引线与发射极引线太近造成击穿短路风险,满足双引脚端子使用,稳定功率端子重心,对DBC与铜基板间空洞率有改善作用。

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