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1. CN109659326 - Array substrate and micro total analysis device

Office
China
Application Number 201910002555.2
Application Date 02.01.2019
Publication Number 109659326
Publication Date 19.04.2019
Grant Number 109659326
Grant Date 18.05.2021
Publication Kind B
IPC
H01L 27/12
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
G01N 21/27
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
21Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
17Systems in which incident light is modified in accordance with the properties of the material investigated
25Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
27using photo-electric detection
CPC
G01N 21/27
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
21Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
17Systems in which incident light is modified in accordance with the properties of the material investigated
25Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
27using photo-electric detection
H01L 27/1222
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
1222with a particular composition, shape or crystalline structure of the active layer
B01L 3/502784
BPERFORMING OPERATIONS; TRANSPORTING
01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
LCHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
3Containers or dishes for laboratory use, e.g. laboratory glassware
50Containers for the purpose of retaining a material to be analysed, e.g. test tubes
502with fluid transport, e.g. in multi-compartment structures
5027by integrated microfluidic structures, i.e. dimensions of channels and chambers are such that surface tension forces are important, e.g. lab-on-a-chip
502769characterised by multiphase flow arrangements
502784specially adapted for droplet or plug flow, e.g. digital microfluidics
H01L 27/124
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
124with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
G01N 21/255
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
21Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
17Systems in which incident light is modified in accordance with the properties of the material investigated
25Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
255Details, e.g. use of specially adapted sources, lighting or optical systems
Applicants BOE TECHNOLOGY GROUP CO., LTD.
京东方科技集团股份有限公司
Inventors LIU YINGMING
刘英明
DONG XUE
董学
WANG HAISHENG
王海生
CHEN XIAOCHUAN
陈小川
DING XIAOLIANG
丁小梁
WANG LEI
王雷
LI CHANGFENG
李昌峰
GU PINCHAO
顾品超
ZHANG PING
张平
CAO XUEYOU
曹学友
Agents 北京同达信恒知识产权代理有限公司 11291
Title
(EN) Array substrate and micro total analysis device
(ZH) 一种阵列基板及微全分析装置
Abstract
(EN)
The invention discloses an array substrate and a micro total analysis device. The array substrate includes a substrate, a plurality of pixel regions which are arranged on the substrate and limited bycrossing of a data line and a grid line, and driving transistors in the pixel regions, wherein each driving transistor includes an active layer graph, and a first preset angle is displayed between theextending direction of the active layer graph and the grid line, and the active layer graph strides the pixel region in an inclined manner in the first preset angle direction; and the source and drain electrodes of each driving transistor are connected to the active layer graph in the first preset angle direction. By setting the first preset angle between the extending direction of active layer graph and the grid line, compared with a conventional device which sets the extending direction of the active layer to be parallel with the grid line, the array substrate can increase the length of theactive layer graph in the extending direction, thus increasing the length breadth ratio of the active layer graph while not increasing the area of the occupied pixel area, so as to improve the conductivity of the driving transistors while realizing high pixel design.

(ZH)
本发明公开了一种阵列基板及微全分析装置,该阵列基板包括:基板,位于基板上由数据线和栅线交叉限定的多个像素区域,以及位于像素区域内的驱动晶体管;驱动晶体管包括有源层图形,有源层图形的延伸方向与栅线呈第一预设角度,且在第一预设角度方向上有源层图形斜跨像素区域;驱动晶体管的源漏电极在第一预设角度方向上与有源层图形连接。通过将有源层图形的延伸方向与栅线呈第一预设角度进行设置,相比于将有源层的延伸方向与栅线平行设置可以增加有源层图形在延伸方向的长度,即增加了有源层图形的长宽比,并且占用像素区域的面积并未增大,从而实现在增加驱动晶体管的导通特性的同时有利于实现高像素设计。

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