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1. (CN109588049) ORGANOMETALLIC COMPOUND AND METHOD

Office : China
Application Number: 201780010791.8 Application Date: 10.02.2017
Publication Number: 109588049 Publication Date: 05.04.2019
Publication Kind : A
Prior PCT appl.: Application Number:PCTCA2017050158 ; Publication Number: Click to see the data
IPC:
C07F 7/04
C23C 16/40
C23C 16/44
C CHEMISTRY; METALLURGY
07
ORGANIC CHEMISTRY
F
ACYCLIC, CARBOCYCLIC, OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
7
Compounds containing elements of the 4th Group of the Periodic System
02
Silicon compounds
04
Esters of silicic acids
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
22
characterised by the deposition of inorganic material, other than metallic material
30
Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
40
Oxides
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
CPC:
C07F 7/025
C23C 16/40
C23C 16/401
C23C 16/405
C23C 16/45553
C23C 16/402
Applicants: SEASTAR CHEMICALS INC
海星化学有限公司
Inventors: ODEDRA RAJESH
R·奥德萨
DONG CUNHAI
C·董
CEMBELLA SHAUN
S·森贝拉
Agents: 北京从真律师事务所 11735
Priority Data: 2920646 12.02.2016 CA
Title: (EN) ORGANOMETALLIC COMPOUND AND METHOD
(ZH) 有机金属化合物及其方法
Abstract: front page image
(EN) A class of organometallic compounds is provided. The compounds correspond in structure to Formula 1 (A)x-M-(OR3)4-x wherein: A is selected from the group consisting of -NR1R2, -N(R4)(CH2)nN(R5R6), -N=C(NR4R5)(NR6R7), OCOR1, halo and Y; R1 and R2 are independently selected from the group consisting of H and a cyclic or acyclic alkyl group having from 1 to 8 carbon atoms, with the proviso that at least one of R1 and R2 must be other than H; R4, R5, R6 and R7 are independently selected from the group consisting of H and an acyclic alkyl group having from 1 to 4 carbon atoms; Y is selected from the group consisting of a 3- to 13-membered heterocyclic radical containing at least one nitrogen atom; R3 is a cyclic or acyclic alkyl group having from 1 to 6 carbon atoms; M is selected from the group consisting of Si, Ge, Sn, Ti, Zr and Hf; x is an integer from 1 to 3; and n is an integer from 1 to 4. Compounds of the invention may be useful as precursors in chemical phase deposition processes such as atomic layer deposition (ALD), chemical vapour deposition (CVD), plasma assisted ALD and plasma assisted CVD. Methods of low temperature vapour phase deposition of metal oxide films, such as SiO2 films, are also provided.
(ZH) 本发明提供了一类有机金属化合物。所述化合物在结构上对应于式1:(A)X‑M‑(OR3)4‑x其中:A选自由‑NR1R2、‑N(R4)(CH2)nN(R5R6)、‑N=C(NR4R5)(NR6R7)、OCOR1、卤素和Y组成的组;R1和R2独立地选自由H和具有1至8个碳原子的环状或无环烷基组成的组,条件是R1和R2中的至少一个必须不是H;R4,R5,R6和R7独立地选自由H和具有1至4个碳原子的无环烷基组成的组;Y选自由含有至少一个氮原子的3‑至13‑元杂环自由基组成的组;R3是具有1至6个碳原子的环状或无环烷基;M选自由Si、Ge、Sn、Ti、Zr和Hf组成的组;x是1至3的整数;以及n是1至4的整数。本发明化合物可用作化学相沉积方法,诸如原子层沉积(ALD)、化学气相沉积(CVD)、等离子体辅助ALD和等离子体辅助CVD中的前驱体。本发明还提供了低温气相沉积金属氧化物薄膜诸如SiO2薄膜的方法。
Also published as:
SG11201806724YKR1020180116308EP3414254WO/2017/136945