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1. (CN109155360) MEMORY DEVICE

Office : China
Application Number: 201780022500.7 Application Date: 03.02.2017
Publication Number: 109155360 Publication Date: 04.01.2019
Publication Kind : A
Prior PCT appl.: Application Number:PCTKR2017001234 ; Publication Number: Click to see the data
IPC:
H01L 43/02
H01L 43/08
H01L 43/10
G11C 11/16
H01L 43/12
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
02
Details
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
08
Magnetic-field-controlled resistors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
10
Selection of materials
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
11
Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02
using magnetic elements
16
using elements in which the storage effect is based on magnetic spin effect
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
12
Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
CPC:
G11C 11/161
H01L 43/08
H01L 43/10
H01L 43/02
H01L 43/04
H01L 43/12
Applicants: INDUSTRY-UNIV COOP FOUND HANYANG UNIV
汉阳大学校产学协力团
Inventors: PARK JEA GUN
朴在勤
LEE DU YEONG
李斗荣
LEE SEUNG EUN
李承垠
Agents: 北京同立钧成知识产权代理有限公司 11205
北京同立钧成知识产权代理有限公司 11205
Priority Data: 10-2016-0015086 05.02.2016 KR
10-2016-0015139 05.02.2016 KR
10-2016-0015154 05.02.2016 KR
10-2016-0015176 05.02.2016 KR
Title: (EN) MEMORY DEVICE
(ZH) 存储器件
Abstract: front page image
(EN) Disclosed is a memory device in which a lower electrode, a seed layer, a synthetic exchange diamagnetic layer, a separation layer, a magnetic tunnel junction, a capping layer, and an upper electrode are stacked on a substrate, and a diffusion barrier is formed between the magnetic tunnel junction and the capping layer. Disclosed is a memory device in which a lower electrode, a seed layer, a synthetic exchange diamagnetic layer, a separation layer, a magnetic tunnel junction, a capping layer, and an upper electrode are stacked on a substrate, and the seed layer is formed of a material that allows the synthetic exchange diamagnetic layer to grow in the fcc (111) direction. Disclosed is a memory device in which a seed layer, a synthetic exchange diamagnetic layer, a separation layer, a magnetic tunnel junction, and a capping layer are stacked between two electrodes, the magnetic tunnel junction includes an insertion layer formed between two free layers, and at least one of the separationlayer, the insertion layer, and the capping layer is formed of a material having the bcc structure. Disclosed is a memory device in which a seed layer, a synthetic exchange diamagnetic layer, a separation layer, a magnetic tunnel junction, and a capping layer are stacked between two electrodes, and the synthetic exchange diamagnetic layer includes one magnetic layer and one non-magnetic layer.
(ZH) 本发明公开存储器件,即,在基板层叠下部电极、种子层、合成交换半磁性层、分离层、磁隧道结、覆盖层及上部电极,在上述磁隧道结和覆盖层之间形成扩散阻挡层。并且,本发明公开存储器件,即,在基板层叠下部电极、种子层、合成交换半磁性层、分离层、磁隧道结、覆盖层及上部电极。上述种子层由使上述合成交换半磁性层向面心立方结构(111)方向形成的物质形成。并且,本发明公开存储器件,即,在两个电极之间层叠种子层、合成交换半磁性层、分离层、磁隧道结及覆盖层,上述磁隧道结包括形成于两个自由层之间的插入层,上述分离层、插入层及覆盖层的至少一个由体心立方结构的物质形成。并且,本发明公开存储器件,即,在两个电极之间层叠种子层、合成交换半磁性层、分离层、磁隧道结及覆盖层,上述合成交换半磁性层分别包括一个磁性层及非磁性层。
Also published as:
US20190043548WO/2017/135767