(EN) The invention provides a fabrication method of an amorphous silicon TFT substrate. The fabrication method comprises the steps of firstly, forming a first photoresist layer with photoresist patterns having three thicknesses by a first-time exposure process, and completing patterning of four layers, namely an amorphous layer, an N-type doping amorphous layer, a first transparent conductive layer anda source-drain metal layer by the first photoresist layer and by an etching process for three times and an ashing process for two times; secondly, patterning a passivation layer by a second-time exposure process; and finally, forming a second photoresist layer with photoresist patterns having two thicknesses by a third-time exposure process, and completing patterning of two layers, namely a second transparent conductive layer and a gate metal layer by the second photoresist layer and by the etching process for two times and the ashing process for one time. Compared with a traditional 4mask process, the optimization process has the advantages that an optical mask process for one time is omitted, a 3mask process of the amorphous silicon TFT substrate is achieved, so that the integral yieldof a factory can be improved, and the cost is reduced.
(ZH) 本发明提供一种非晶硅TFT基板的制作方法，首先经第一道曝光制程形成具有三个厚度的光阻图案的第一光阻层，并通过三次蚀刻制程和两次灰化制程，利用第一光阻层完成非晶硅层、N型掺杂非晶硅层、第一透明导电层及源漏极金属层这四层的图案化，然后经第二道曝光制程进行钝化层的图案化，最后经第三道曝光制程形成具有两个厚度的光阻图案的第二光阻层，通过两次蚀刻制程和一次灰化制程，利用第二光阻层完成第二透明导电层及栅极金属层这两层的图案化，本发明通过优化工艺，相对于现有4mask工艺进一步节省了一道光罩制程，实现非晶硅TFT基板的3mask制作工艺，从而可以提升工厂的整体产能，降低成本。
