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1. (CN108496245) Organic semiconductor film production device

Office : China
Application Number: 201780007888.3 Application Date: 11.01.2017
Publication Number: 108496245 Publication Date: 04.09.2018
Publication Kind : A
Prior PCT appl.: Application Number:PCTJP2017000594 ; Publication Number: Click to see the data
IPC:
H01L 21/368
H01L 21/336
H01L 29/786
H01L 51/05
H01L 51/40
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
34
the devices having semiconductor bodies not provided for in groups H01L21/06, H01L21/16, and H01L21/18159
36
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
368
using liquid deposition
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334
Multistep processes for the manufacture of devices of the unipolar type
335
Field-effect transistors
336
with an insulated gate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
786
Thin-film transistors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
05
specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
05
specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier
40
Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
CPC:
B05C 5/001
B05C 5/022
B05C 5/0254
B05C 11/04
H01L 27/127
H01L 29/78696
H01L 51/0003
H01L 51/56
H01L 51/05
B05C 11/045
H01L 51/0512
H01L 51/105
Applicants: FUJIFILM CORPORATION
富士胶片株式会社
THE UNIVERSITY OF TOKYO
国立大学法人东京大学
Inventors: NAKAMURA SEIGO
中村诚吾
MAEHARA YOSHIKI
前原佳纪
ITAI YUICHIRO
板井雄一郎
USAMI YOSHIHISA
宇佐美由久
TAKEYA JUNICHI
竹谷纯一
Agents: 北京三友知识产权代理有限公司 11127
北京三友知识产权代理有限公司 11127
Priority Data: 2016-019102 03.02.2016 JP
Title: (EN) Organic semiconductor film production device
(ZH) 有机半导体膜的制造装置
Abstract: front page image
(EN) An organic semiconductor film production device for producing an organic semiconductor film by using an organic semiconductor solution, the production device having: a coating member that is positioned so as to face the surface of a substrate on which the organic semiconductor film is to be formed at a distance therefrom, and forms a liquid pool of the organic semiconductor solution between the substrate and the coating member itself; a supply unit for supplying the organic semiconductor solution between the substrate and the coating member; and a cover unit for covering at least the crystal growth section of the organic semiconductor solution. The cover unit is equipped with a guide to which a solvent of the vaporized organic semiconductor solution adheres, and which guides the adhered substance formed from the solvent of the vaporized organic semiconductor solution to a region where the organic semiconductor film has not yet been deposited. The production device supplies the organicsemiconductor solution between the substrate surface and the coating member by using the supply unit, and while doing so, moves the coating member in a first direction parallel to the substrate surface while the coating member contacts the organic semiconductor solution, and forms the organic semiconductor film with the crystal growth section as the starting point.
(ZH) 本发明提供一种使用有机半导体溶液来制造有机半导体膜的有机半导体膜的制造装置。制造装置具有:涂布部件,与形成有机半导体膜的基板的表面对向且分开而配置,在与基板之间形成有机半导体溶液的积液;供给部,向基板和涂布部件之间供给有机半导体溶液;以及罩部,至少覆盖有机半导体溶液的晶体生长部。罩部具备附着有机半导体溶液蒸发出的溶剂且将由有机半导体溶液蒸发出的溶剂形成的附着物导向有机半导体膜的未成膜区域的引导件。一边由供给部向与基板的表面之间供给有机半导体溶液,一边使涂布部件以接触有机半导体溶液的状态在与基板的表面平行的第1方向上移动,从而将晶体生长部作为起点而形成有机半导体膜。
Also published as:
US20180326447EP3413338WO/2017/134991