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1. (CN108496249) SEMICONDUCTOR DEVICE

Office : China
Application Number: 201680079904.5 Application Date: 29.01.2016
Publication Number: 108496249 Publication Date: 04.09.2018
Publication Kind : A
Prior PCT appl.: Application Number:PCTJP2016052695 ; Publication Number: Click to see the data
IPC:
H01L 25/07
H01L 25/18
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25
Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03
all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
04
the devices not having separate containers
07
the devices being of a type provided for in group H01L29/78
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25
Assemblies consisting of a plurality of individual semiconductor or other solid state devices
18
the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/-H01L51/160
CPC:
C09D 163/00
H01L 23/057
H01L 23/142
H01L 23/36
H01L 25/072
H01L 25/18
H01L 2224/33
H01L 25/07
B32B 27/38
H01L 23/4924
Applicants: MITSUBISHI ELECTRIC CORPORATION
三菱电机株式会社
Inventors: YOSHIDA HIROSHI
吉田博
IMOTO YUJI
井本裕儿
ISHIBASHI HIDETOSHI
石桥秀俊
MURATA DAISUKE
村田大辅
NAKAHARA KENTA
中原贤太
OKA SEIJI
冈诚次
FUJINO JUNJI
藤野纯司
ASAJI NOBUHIRO
浅地伸洋
Agents: 北京天昊联合知识产权代理有限公司 11112
北京天昊联合知识产权代理有限公司 11112
Priority Data:
Title: (EN) SEMICONDUCTOR DEVICE
(ZH) 半导体装置
Abstract: front page image
(EN) A semiconductor device of the present invention is provided with: a substrate; a plurality of semiconductor chips that are fixed to the substrate; an insulating board in which a through hole is formed; a first lower conductor having a lower main body, which is formed on the lower surface of the insulating board, and which is soldered to one of the semiconductor chips, and a lower protruding section connected to the lower main body, said lower protruding section extending to the outside of the insulating board in plan view; a second lower conductor, which is formed on the lower surface of the insulating board, and which is soldered to one of the semiconductor chips; an upper conductor having an upper main body formed on the upper surface of the insulating board, and an upper protruding section, which is connected to the upper main body, and which extends to the outside of the insulating board in plan view; a connecting section, which is provided in the through hole, and which connects the upper main body and the second lower conductor to each other; a first external electrode connected to the lower protruding section; and a second external electrode connected to the upper protrudingsection.
(ZH) 具有:基板;多个半导体芯片,它们固定于该基板;绝缘板,其形成有贯穿孔;第1下部导体,其具有下部主体和下部凸出部,该下部主体形成于该绝缘板的下表面,与该多个半导体芯片中的任意者焊接,该下部凸出部与该下部主体相连,在俯视观察时该下部凸出部延伸至该绝缘板之外;第2下部导体,其形成于该绝缘板的下表面,与该多个半导体芯片中的任意者焊接;上部导体,其具有上部主体和上部凸出部,该上部主体形成于该绝缘板的上表面,该上部凸出部与该上部主体相连,在俯视观察时该上部凸出部延伸至该绝缘板之外;连接部,其设置于该贯穿孔,将该上部主体和该第2下部导体连接;第1外部电极,其与该下部凸出部连接;以及第2外部电极,其与该上部凸出部连接。
Also published as:
US20180294253DE112016006336WO/2017/130381