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1. CN107462350 - Piezoelectric transducer, voltage detection device, production method and detection method

Office China
Application Number 201710706179.6
Application Date 17.08.2017
Publication Number 107462350
Publication Date 12.12.2017
Grant Number 107462350
Grant Date 18.02.2020
Publication Kind B
IPC
G01L 1/16
GPHYSICS
01MEASURING; TESTING
LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
1Measuring force or stress, in general
16using properties of piezo-electric devices
CPC
G01L 1/16
GPHYSICS
01MEASURING; TESTING
LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
1Measuring force or stress, in general
16using properties of piezo-electric devices
H01L 27/1248
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
1248with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
H01L 29/0673
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions
0657characterised by the shape of the body
0665the shape of the body defining a nanostructure
0669Nanowires or nanotubes
0673oriented parallel to a substrate
H01L 29/24
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
12characterised by the materials of which they are formed
24including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
H01L 29/66742
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
66007Multistep manufacturing processes
66075of devices having semiconductor bodies comprising group 14 or group 13/15 materials
66227the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
66409Unipolar field-effect transistors
66477with an insulated gate, i.e. MISFET
66742Thin film unipolar transistors
H01L 29/78654
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
786Thin film transistors, ; i.e. transistors with a channel being at least partly a thin film
78651Silicon transistors
78654Monocrystalline silicon transistors
Applicants BOE TECHNOLOGY GROUP CO., LTD.
京东方科技集团股份有限公司
Inventors MENG HU
孟虎
Agents 北京银龙知识产权代理有限公司 11243
北京银龙知识产权代理有限公司 11243
Title
(EN) Piezoelectric transducer, voltage detection device, production method and detection method
(ZH) 一种压电传感器、压力检测装置、制作方法及检测方法
Abstract
(EN)
The invention provides a piezoelectric transducer, a voltage detection device, a production method and a detection method. The piezoelectric transducer comprises a thin film transistor located on a substrate, wherein the thin film transistor comprises a source layer, and a piezoelectric layer contacted with an active layer of the thin film transistor. When the substrate is bent by an external force, the piezoelectric layer generates a direct piezoelectric effect; and that is to say, positive bound charge or negative bound charge is generated on the upper surface and the lower surface of the piezoelectric layer. By the action of an electric field of the bound charge of the lower surface, an energy band of the active layer can be bent; a carrier concentration of a channel of the thin film transistor is changed; and source drain current is changed. The scanned change of the source drain current can be regarded as detection of a corresponding voltage signal. Obviously, the piezoelectric transducer can be controlled by switch control of the thin film transistor, so that the piezoelectric transducer is applicable to some electronic devices requiring arrayed layouts.

(ZH)
本发明提供一种压电传感器、压力检测装置、制作方法及检测方法。压电传感器包括:位于基板上的薄膜晶体管,所述薄膜晶体管包括有源层;与所述薄膜晶体管的有源层相接触的压电层。当外力使基板发生弯曲时,导致压电层产生正压电效应,即压电层上下表面产生正或负的束缚电荷。在下表面的束缚电荷的电场作用下,有源层的能带会发生弯曲,导致薄膜晶体管沟道的载流子浓度发生改变,致使源漏电流发生改变。若扫描到源漏电流的变化,可视为检测到相应的压力信号。显然,通过对薄膜晶体管的开关控制即可实现对压电传感器的控制,因此本发明的压电传感器可应用于一些需要以阵列方式进行布局的电子器件中。