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1. CN107408585 - Optoelectronic device and method of making same

Office China
Application Number 201680015124.4
Application Date 07.03.2016
Publication Number 107408585
Publication Date 28.11.2017
Grant Number 107408585
Grant Date 19.05.2020
Publication Kind B
IPC
H01L 31/0224
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0224Electrodes
H01L 31/0232
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0232Optical elements or arrangements associated with the device
H01L 51/00
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
H01L 51/44
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
42specially adapted for sensing infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation; specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
44Details of devices
H01L 51/52
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
52Details of devices
H01L 31/0392
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
036characterised by their crystalline structure or particular orientation of the crystalline planes
0392including thin films deposited on metallic or insulating substrates
CPC
C03C 17/3417
CCHEMISTRY; METALLURGY
03GLASS; MINERAL OR SLAG WOOL
CCHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
17Surface treatment of glass, not in the form of fibres or filaments, by coating
34with at least two coatings having different compositions
3411with at least two coatings of inorganic materials
3417all coatings being oxide coatings
C03C 17/36
CCHEMISTRY; METALLURGY
03GLASS; MINERAL OR SLAG WOOL
CCHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
17Surface treatment of glass, not in the form of fibres or filaments, by coating
34with at least two coatings having different compositions
36at least one coating being a metal
C03C 17/40
CCHEMISTRY; METALLURGY
03GLASS; MINERAL OR SLAG WOOL
CCHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
17Surface treatment of glass, not in the form of fibres or filaments, by coating
34with at least two coatings having different compositions
36at least one coating being a metal
40all coatings being metal coatings
C23C 16/407
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
22characterised by the deposition of inorganic material, other than metallic material
30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
40Oxides
407of zinc, germanium, cadmium, indium, tin, thallium or bismuth
H01L 31/022425
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0224Electrodes
022408for devices characterised by at least one potential jump barrier or surface barrier
022425for solar cells
H01L 31/022466
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0224Electrodes
022466made of transparent conductive layers, e.g. TCO, ITO layers
Applicants VITRO, S.A.B. DE C.V.
维特罗平板玻璃有限责任公司
Inventors MCCAMY JAMES W
J·W·麦卡米
MA ZHIXUN
马智训
KABAGAMBE BENJAMIN
B·卡巴甘比
KORAM KWAKU K
K·K·克拉姆
HUNG CHENG-HUNG
洪正宏
NELIS GARY J
G·J·内里斯
Agents 中国国际贸易促进委员会专利商标事务所 11038
Priority Data 14/963,736 09.12.2015 US
14/963,778 09.12.2015 US
14/963,799 09.12.2015 US
14/963,832 09.12.2015 US
62/131,938 12.03.2015 US
Title
(EN) Optoelectronic device and method of making same
(ZH) 光电器件及其制造方法
Abstract
(EN)
An optoelectronic device (10) includes a first substrate (12) having a first surface (14) and a second surface (16); an underlayer (18) located over the second surface (16); a first conductive layer (20) over the underlayer (18); an overlayer (22) over the first conductive layer (20); a semiconductor layer (24) over the first conductive layer (20); and a second conductive layer (26) over the semiconductor layer (24). The first conductive layer (20) includes a conductive oxide and at least one dopant selected from the group consisting of tungsten, molybdenum, niobium, and fluorine; and/or the overlayer (22) includes a buffer layer (42) including tin oxide and at least one material selected from the group consisting of zinc, indium, gallium, and magnesium.

(ZH)
一种光电器件(10)包括:具有第一表面(14)和第二表面(16)的第一基材(12);位于该第二表面(16)上的底层(18);位于该底层(18)上的第一导电层(20);位于该第一导电层(20)上的覆盖层(22);位于该第一导电层(20)上的半导体层(24);和位于该半导体层(24)上的第二导电层(26)。该第一导电层(20)包括导电氧化物和选自钨、钼、铌和氟的至少一种掺杂剂;和/或该覆盖层(22)包括缓冲层(42),该缓冲层(42)包括氧化锡和选自锌、铟、镓和镁的至少一种材料。