Processing

Please wait...

Settings

Settings

Goto Application

1. CN106663043 - Method and system for dynamic word line based configuration of a three-dimensional memory device

Office
China
Application Number 201580028593.5
Application Date 14.05.2015
Publication Number 106663043
Publication Date 10.05.2017
Grant Number 106663043
Grant Date 01.10.2019
Publication Kind B
IPC
G06F 11/10
GPHYSICS
06COMPUTING; CALCULATING OR COUNTING
FELECTRIC DIGITAL DATA PROCESSING
11Error detection; Error correction; Monitoring
07Responding to the occurrence of a fault, e.g. fault tolerance
08Error detection or correction by redundancy in data representation, e.g. by using checking codes
10Adding special bits or symbols to the coded information, e.g. parity check, casting out nines or elevens
G11C 8/08
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
8Arrangements for selecting an address in a digital store
08Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
G11C 11/56
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
56using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
G11C 16/04
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
16Erasable programmable read-only memories
02electrically programmable
04using variable threshold transistors, e.g. FAMOS
G11C 16/10
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
16Erasable programmable read-only memories
02electrically programmable
06Auxiliary circuits, e.g. for writing into memory
10Programming or data input circuits
G11C 16/34
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
16Erasable programmable read-only memories
02electrically programmable
06Auxiliary circuits, e.g. for writing into memory
34Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
CPC
G06F 11/1072
GPHYSICS
06COMPUTING; CALCULATING; COUNTING
FELECTRIC DIGITAL DATA PROCESSING
11Error detection; Error correction; Monitoring
07Responding to the occurrence of a fault, e.g. fault tolerance
08Error detection or correction by redundancy in data representation, e.g. by using checking codes
10Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
1008in individual solid state devices
1072in multilevel memories
G11C 8/08
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
8Arrangements for selecting an address in a digital store
08Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
G11C 11/5628
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
56using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
5621using charge storage in a floating gate
5628Programming or writing circuits; Data input circuits
G11C 13/0002
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
13Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00
0002using resistive RAM [RRAM] elements
G11C 16/0483
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
16Erasable programmable read-only memories
02electrically programmable
04using variable threshold transistors, e.g. FAMOS
0483comprising cells having several storage transistors connected in series
G11C 16/10
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
16Erasable programmable read-only memories
02electrically programmable
06Auxiliary circuits, e.g. for writing into memory
10Programming or data input circuits
Applicants SANDISK TECHNOLOGIES INC
桑迪士克科技有限责任公司
Inventors HIGGINS JAMES M
J.M.希金斯
ELLIS ROBERT W
R.W.埃利斯
DARRAGH NEIL R
N.R.达拉赫
OLBRICH AARON K
A.K.奥布里奇
KANKANI NAVNEETH
N.坎卡尼
SPROUSE STEVEN
S.斯普劳斯
Agents 北京市柳沈律师事务所 11105
Priority Data 14298841 06.06.2014 US
62/005,930 30.05.2014 US
Title
(EN) Method and system for dynamic word line based configuration of a three-dimensional memory device
(ZH) 用于基于动态的字线的三维存储器装置的配置的方法和系统
Abstract
(EN) A memory controller configures a plurality of word lines associated with a respective block of a 3D memory device in a first configuration, where the first configuration includes a set of configuration parameters for each word line of the plurality of word lines determined at least in part on the vertical positions of each word line relative to a substrate of the 3D memory device and, while the plurality of word lines are configured in the first configuration, writes data to and reads data from the respective block. For the respective block, the memory controller: adjusts a first parameter in the respective set of configuration parameters corresponding to a respective word line of the plurality of word lines in response to detecting a first trigger condition as to the respective word line and, after adjusting the first parameter, writes data to and reads data from the respective word line.
(ZH) 存储器控制器以第一配置来配置与3D存储器装置的各个块相关联的多个字线,其中所述第一配置包括至少部分基于每个字线相对于所述3D存储器装置的衬底的垂直位置而确定的用于所述多个字线的每个字线的一组配置参数,并且当所述多个字线配置在所述第一配置中时,将数据写入所述各个块并且从所述各个块读取数据。对于所述各个块,存储器控制器:响应于针对所述各个字线检测到第一触发条件,调整对应于所述多个字线的各个字线的各个组的配置参数中的第一参数,并且,在检测所述第一参数之后,将数据写入到所述各个字线并且从所述各个字线读取数据。