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1. (CN102959750) 离子控制的三栅极器件和量子电子器件

Office : China
Application Number: 201180033400.7 Application Date: 03.06.2011
Publication Number: 102959750 Publication Date: 06.03.2013
Grant Number: 102959750 Grant Date: 30.03.2016
Publication Kind : B
Prior PCT appl.: Application Number:PCTDE2011001167 ; Publication Number: Click to see the data
IPC:
H01L 39/14
H01L 39/22
H01L 45/00
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
39
Devices using superconductivity or hyperconductivity; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
14
Permanent superconductor devices
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
39
Devices using superconductivity or hyperconductivity; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
22
Devices comprising a junction of dissimilar materials, e.g. Josephson-effect devices
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
45
Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
CPC:
H01L 39/223
G11C 13/0007
G11C2213/17
G11C2213/53
H01L 39/145
H01L 39/228
H01L 45/08
H01L 45/1206
H01L 45/1226
H01L 45/1266
H01L 45/147
Applicants: 于利奇研究中心有限公司
Inventors: U.波佩
D.韦伯
Y.迪文
M.法利
Agents: 中国专利代理(香港)有限公司 72001
中国专利代理(香港)有限公司 72001
Priority Data: 102010026098.3 05.07.2010 DE
Title: (ZH) 离子控制的三栅极器件和量子电子器件
Abstract: front page image
(ZH)

本发明涉及一种可通过离子运动来开关的三栅极器件。该三栅极器件具有源电极(3)、漏电极(3)以及连接在所述源电极与所述漏电极之间的沟道(2),所述沟道由其电导率能够通过输入和/或输出离子来改变的材料制成。根据本发明,所述三栅极器件包括与栅电极(6)接触的离子池(5),所述离子池与所述沟道连接得使得在给所述栅电极施加电势时所述离子池能够与所述沟道交换离子。已经认识到,在将一起存在于离子池和沟道中的离子在离子池和沟道上分布时,在三栅极器件中可以存储信息。离子在沟道上和在离子池上的分布当且仅当给栅电极施加相应驱动电势时才改变。因此与RRAM不同,不存在“时间-电压困境”。


Also published as:
US20130079230EP2591514JP2013535805WO/2012/003821