Processing

Please wait...

Settings

Settings

Goto Application

1. CN102959750 - 离子控制的三栅极器件和量子电子器件

Office China
Application Number 201180033400.7
Application Date 03.06.2011
Publication Number 102959750
Publication Date 06.03.2013
Grant Number 102959750
Grant Date 30.03.2016
Publication Kind B
IPC
H01L 39/14
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
39Devices using superconductivity or hyperconductivity; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
14Permanent superconductor devices
H01L 39/22
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
39Devices using superconductivity or hyperconductivity; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
22Devices comprising a junction of dissimilar materials, e.g. Josephson-effect devices
H01L 45/00
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
45Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
CPC
H01L 39/223
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
39Devices using superconductivity; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
22Devices comprising a junction of dissimilar materials, e.g. Josephson-effect devices
223Josephson-effect devices
G11C 13/0007
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
13Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00
0002using resistive RAM [RRAM] elements
0007comprising metal oxide memory material, e.g. perovskites
G11C 13/04
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
13Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00
04using optical elements ; using other beam accessed elements, e.g. electron, ion beam
G11C 2213/17
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
2213Indexing scheme relating to G11C13/00 for features not covered by this group
10Resistive cells; Technology aspects
17Memory cell being a nanowire transistor
G11C 2213/53
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
2213Indexing scheme relating to G11C13/00 for features not covered by this group
50Resistive cell structure aspects
53Structure wherein the resistive material being in a transistor, e.g. gate
H01L 39/145
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
39Devices using superconductivity; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
14Permanent superconductor devices
145Three or more electrode devices
Applicants 于利奇研究中心有限公司
Inventors U.波佩
D.韦伯
Y.迪文
M.法利
Agents 中国专利代理(香港)有限公司 72001
中国专利代理(香港)有限公司 72001
Title
(ZH) 离子控制的三栅极器件和量子电子器件
Abstract
(ZH)

本发明涉及一种可通过离子运动来开关的三栅极器件。该三栅极器件具有源电极(3)、漏电极(3)以及连接在所述源电极与所述漏电极之间的沟道(2),所述沟道由其电导率能够通过输入和/或输出离子来改变的材料制成。根据本发明,所述三栅极器件包括与栅电极(6)接触的离子池(5),所述离子池与所述沟道连接得使得在给所述栅电极施加电势时所述离子池能够与所述沟道交换离子。已经认识到,在将一起存在于离子池和沟道中的离子在离子池和沟道上分布时,在三栅极器件中可以存储信息。离子在沟道上和在离子池上的分布当且仅当给栅电极施加相应驱动电势时才改变。因此与RRAM不同,不存在“时间-电压困境”。