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1. CN105074880 - 基板处理装置

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Office
China
Application Number 201380072994.1
Application Date 01.11.2013
Publication Number 105074880
Publication Date 18.11.2015
Grant Number 105074880
Grant Date 26.06.2018
Publication Kind B
IPC
H01L 21/304
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304Mechanical treatment, e.g. grinding, polishing, cutting
H01L 21/027
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
027Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
H01L 21/306
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
CPC
B08B 3/14
BPERFORMING OPERATIONS; TRANSPORTING
08CLEANING
BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
3Cleaning by methods involving the use or presence of liquid or steam
04Cleaning involving contact with liquid
10with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity, by vibration
14Removing waste, e.g. labels, from cleaning liquid; ; Regenerating cleaning liquids
B01D 19/0031
BPERFORMING OPERATIONS; TRANSPORTING
01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
DSEPARATION
19Degasification of liquids
0031by filtration
B01D 35/02
BPERFORMING OPERATIONS; TRANSPORTING
01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
DSEPARATION
35Other filtering devices; Auxiliary devices for filtration; Filter housing constructions
02Filters adapted for location in special places, e.g. pipe-lines, pumps, stop-cocks,
H01L 21/67017
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67017Apparatus for fluid treatment
H01L 21/67023
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67017Apparatus for fluid treatment
67023for general liquid treatment, e.g. etching followed by cleaning
H01L 21/67051
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67017Apparatus for fluid treatment
67028for cleaning followed by drying, rinsing, stripping, blasting or the like
6704for wet cleaning or washing
67051using mainly spraying means, e.g. nozzles
Applicants 斯克林集团公司
Inventors 石井淳一
冈本浩一
Agents 隆天知识产权代理有限公司 72003
隆天知识产权代理有限公司 72003
Priority Data 2013026282 14.02.2013 JP
Title
(ZH) 基板处理装置
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Abstract
(ZH) 提供以简单的机构减少附着于基板的颗粒的量的技术。基板处理装置(10)是从喷嘴(11)喷出处理液来处理基板(9)的装置。基板处理装置(10)具有供给配管(30)以及气泡捕捉部(F2)。供给配管(30)的一端经由去除颗粒的第一过滤器(F1)与供给处理液的处理液供给部(20)的槽(21)连接，供给配管(30)的另一端与喷嘴(11)连接。气泡捕捉部(F2)安装在供给配管(30)的第一过滤器(F1)与喷嘴(11)之间的位置，捕捉处理液中含有的气泡(Ba1)。气泡捕捉部(F2)引起的压力损失(PL2)与所述第一过滤器(F1)引起的压力损失(PL1)大致相同或比所述第一过滤器(F1)引起的压力损失(PL1)小。
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