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1. (CN104955978) Method for producing a dielectric and/or barrier layer or multilayer on a substrate, and device for implementing said method

Office : China
Application Number: 201380062194.1 Application Date: 27.11.2013
Publication Number: 104955978 Publication Date: 30.09.2015
Publication Kind : A
Prior PCT appl.: Application Number:PCTES2013000264 ; Publication Number: Click to see the data
IPC:
C23C 14/10
C23C 14/35
C23C 16/40
C23C 16/509
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
06
characterised by the coating material
10
Glass or silica
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22
characterised by the process of coating
34
Sputtering
35
by application of a magnetic field, e.g. magnetron sputtering
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
22
characterised by the deposition of inorganic material, other than metallic material
30
Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
40
Oxides
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
50
using electric discharges
505
using radio frequency discharges
509
using internal electrodes
Applicants: ABENGOA SOLAR NEW TECH SA
Inventors: GIL ROSTRA JORGE
RICO GAVIRA VICTOR
YUBERO VALENCIA FRANCISCO
ESPINOS MANZORRO JUAN PEDRO
RODRIGUEZ GONZALEZ-ELIPE AGUSTIN
SANCHEZ CORTEZON EMILIO
DELGADO SANCHEZ JOSE MARIA
Priority Data: 12380053.4 28.11.2012 EP
Title: (EN) Method for producing a dielectric and/or barrier layer or multilayer on a substrate, and device for implementing said method
(ZH) 用于在基材上制备单一介电层和/或阻挡层或多层的方法以及用于实施所述方法的装置
Abstract: front page image
(EN) The invention relates to a method for producing dielectric and/or barrier layers on a substrate, characterized in that it comprises the following steps: (a) cleaning substrates, (b) placing the substrate in a sample carrier and introducing same into a vacuum chamber, (c) dosing an inert gas and a reactive gas into said vacuum chamber, (d) injecting, into said vacuum chamber, a volatile precursor that has at least one cation of the compound to be deposited, (e) activating a radiofrequency source and activating at least one magnetron, (f) decomposition of the volatile precursor by plasma, producing the reaction between the cation of the volatile precursor and the reactive gas at the same time as the reaction is produced between the reactive gas contained in the plasma with the cation generated from the target by cathode sputtering, thereby generating the deposition of the film on the substrate. The invention also relates to the device for carrying out said method.
(ZH)

本发明涉及在基材上制备介电层和/或阻挡层的方法,其特征在于包括下列阶段:(a)清洁基材,(b)将所述基材置于样品架上,并将其导入到真空仓室中,(c)在所述真空仓室中计量投入惰性气体和反应性气体,(d)在所述真空仓室中注入具有待沉积化合物的至少一种阳离子的挥发性前体,(e)激活射频源并激活至少一个磁控管,(f)使用等离子体分解所述挥发性前体,在所述挥发性前体的阳离子与所述反应性气体之间的反应,发生在所述等离子体中包含的反应性气体与通过阴离子溅射来自于靶的阳离子之间的反应发生的同时,由此导致薄膜沉积在所述基材上。本发明还涉及用于执行所述方法的装置。


Also published as:
KR1020150099764US20150325418ES2542252WO/2014/083218