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1. CN104054170 - Electronic component having a corrosion-protected bonding connection and method for producing the component

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Office
China
Application Number 201280066623.8
Application Date 29.11.2012
Publication Number 104054170
Publication Date 17.09.2014
Grant Number 104054170
Grant Date 15.03.2017
Publication Kind B
IPC
H01L 23/053
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
02Containers; Seals
04characterised by the shape
053the container being a hollow construction and having an insulating base as a mounting for the semiconductor body
H01L 23/26
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
16Fillings or auxiliary members in containers, e.g. centering rings
18Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
26including materials for absorbing or reacting with moisture or other undesired substances
CPC
H01L 23/053
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
02Containers; Seals
04characterised by the shape ; of the container or parts, e.g. caps, walls
053the container being a hollow construction and having an insulating ; or insulated; base as a mounting for the semiconductor body
H01L 23/26
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
16Fillings or auxiliary members in containers ; or encapsulations; , e.g. centering rings
18Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
26including materials for absorbing or reacting with moisture or other undesired substances ; , e.g. getters
H01L 24/45
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
24Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
44Structure, shape, material or disposition of the wire connectors prior to the connecting process
45of an individual wire connector
H01L 24/48
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
24Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
48of an individual wire connector
H01L 2224/05624
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
02Bonding areas; Manufacturing methods related thereto
04Structure, shape, material or disposition of the bonding areas prior to the connecting process
05of an individual bonding area
0554External layer
05599Material
056with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
05617the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
05624Aluminium [Al] as principal constituent
H01L 2224/45015
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
44Structure, shape, material or disposition of the wire connectors prior to the connecting process
45of an individual wire connector
45001Core members of the connector
4501Shape
45012Cross-sectional shape
45015being circular
Applicants 罗伯特·博世有限公司
Inventors J·迪尔
R·贝克尔
S·拉默斯
L·米勒
F·贝茨
M·施勒希特
Agents 北京市金杜律师事务所 11256
Priority Data 102012200273 11.01.2012 DE
Title
(EN) Electronic component having a corrosion-protected bonding connection and method for producing the component
(ZH) 具有防腐蚀压焊连接的电子构件和用于制造该构件的方法
front page image
Abstract
(EN) The invention relates to an electronic component (1) having a corrosion-protected bonding connection and a method for producing said component. For this purpose the electronic component (1) has at least one semiconductor chip (3) on a substrate (4). Moreover, a bonding connection at risk of corrosion is provided on the semiconductor chip (3). For encapsulation of the at least one semiconductor chip (3) and the at least one bonding connection at risk of corrosion, said semiconductor chip and bonding connection are surrounded by a hermetically sealing housing (5). The hermetically sealed bonding connection is a bonding wire connection (2) which is fully enclosed in the housing (5), in which the substrate (4) is at least partially enclosed. The substrate (4) has at least one surface-mounted hydrolysis-sensitive component (6) in the housing (5).
(ZH) 本发明涉及一种具有防腐蚀压焊连接的电子构件(1)和用于制造这种电子构件的方法。为此电子构件(1)在衬底(4)上具有至少一个半导体芯片(3)。此外，在半导体芯片(3)上设有承受腐蚀风险的压焊连接。作为至少一个半导体芯片(3)和至少一个承受腐蚀风险的压焊连接的封装，它们由密闭包封的外壳(5)包围。密闭包封的压焊连接是压焊引线连接(2)，它完全地与至少部分的衬底(4)包封在外壳(5)内。衬底(4)在外壳(5)内具有至少一个表面安装的易水解的元件(6)。
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