(EN) The invention relates to a multiple bonding layer for thin-wafer handling. Multiple bonding layer schemes that temporarily join semiconductor substrates are provided. In the inventive bonding scheme, at least one of the layers is directly in contact with the semiconductor substrate and at least two layers within the scheme are in direct contact with one another. The present invention provides several processing options as the different layers within the multilayer structure perform specific functions. More importantly, it will improve performance of the thin-wafer handling solution by providing higher thermal stability, greater compatibility with harsh backside processing steps, protection of bumps on the front side of the wafer by encapsulation, lower stress in the debonding step, and fewer defects on the front side.
(ZH) 本发明涉及薄晶片处理的多粘合层。提供一种临时地结合半导体衬底的多粘合层方案。在该创新性粘合方案中,多个层中的至少一个层直接与半导体衬底接触并且该方案中的至少两个层直接彼此接触。本发明提供若干加工选择,因为多层结构中的不同层执行具体功能。更重要地,通过提供更高的温度稳定性、与粗糙背侧加工步骤更大的兼容性、通过封装对晶片前侧凸起的保护、在脱粘步骤中更低的应力和前侧更少的缺陷来提高薄晶片处理方案的性能。