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1. CA2069911 - SEMICONDUCTOR DEVICE

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CLAIMS
1. A semiconductor device comprising a first field effect transistor of a first conductivity type (N), which transistor is arranged in a semiconductor body (3) and has a source region (31) provided with a source connection (311), a drain region (33) provided with a drain connection (331), a channel region (32) arranged between the source and drain regions, and members (5, 71, 72) for producing a conducting channel in the channel region between the source and drain regions, characterized in that it comprises an insulating layer (4) provided on the semiconductor body and a first layer (5), arranged on the insulating layer, of semiconducting material in which a second field effect transistor is produced, the conductivity type (P) of which is opposite to the conductivity type of said first field effect transistor and which has a source region (51), a drain region (53) and a channel region (52),
the channel region (52) of the second transistor is adapted so as to at least overlap the channel region (32) of the first transistor,
the voltage-absorbing directions of the two transistors at least substantially coincide,
the source region (51) of the second transistor is provided with a connection (511) for connection of a control voltage (u) between the source regions (31, 51) of the first transistor and the second transistor,
the drain region (53) of the second transistor is provided with a connection (531) for connection of a control voltage (u) between the drain regions (33, 53) of the first transistor and the second transistor, and that
the source and drain regions (31, 33) of one of the two transistors are provided with connection members (311, 312, 331, 332) for connection of an output circuit (9, 10).
2. A semiconductor device according to claim 1, characterized in that the doping concentrations and the thicknesses of the channel regions (32, 52) of the two transistors are selected such that charge balance prevails between the two channel regions.
3. A semiconductor device according to any of the preceding claims, characterized in that the two transistors are of enhancement type.
4. A semiconductor device according to any of the preceding claims, characterized in that a stop zone (34, 35) of the same conductivity type (P) as the channel region (32) of a transistor, but with a higher degree of doping than the channel region, is provided between the channel region (32) and at least one of the source and drain regions (31, 33) of the transistor.
5. A semiconductor device according to claim 4, characterized in that a first stop zone (39) is provided between the channel region (32) of the transistor and its source region (31) and a second stop zone (35) is provided between the channel region of the transistor and its drain region (33).
6. A semiconductor device according to claim 4, characterized in that stop zones are provided in both the transistors.
7. A semiconductor device according to claim 6, characterized in that one transistor has a stop zone (54) between its channel region (52) and its source region (51) and that the other transistor has a stop zone (35) between its channel region (32) and its drain region (33).
8. A semiconductor device according to any of the preceding claims, characterized in that said semiconductor body (3) consists of a second layer of semiconducting material provided on an insulating base (2).
9. A semiconductor device according to any of the preceding claims, characterized in that it comprises control voltage-generating members (11, 12) adapted, in dependence on a received control signal (s), to supply said control voltages (u) to the source and drain connections of the transistors for control of the transistors between conducting and non-conducting states.
10. A semiconductor device according to claim 9, characterized in that the control voltage-generating members are adapted to supply to the source and drain connections of the transistors, for control of the component to conducting state, control voltages of a first polarity and for control of the component to non-conducting state, control voltages of the opposite polarity.
11. A semiconductor device according to claim 9 or 10, characterized in that said control voltage-generating members are so designed that said control voltages are mutually equally great.
12. A semiconductor device according to any of the preceding claims, characterized in that it is provided with potential-controlling members (61, 62) adapted, in the non-conducting state of the transistors, to maintain the source regions (31, 51) of the two transistors at a first potential and the drain regions (33, 53) of the two transistors at a second potential.
13. A semiconductor device according to claim 12, characterized in that the potential-controlling members consist of a first resistance element (61) connected between
the source regions of the transistors and a second resistance element (62) connected between the drain regions of the transistors.
19. A semiconductor device according to any of the preceding claims, characterized in that the doping profiles of the channel regions (32, 52) are so chosen that, in the non-conducting state of the transistors, the potential at each point of the channel region of one of the transistors is as equal as possible to the potential in that part of the channel region of the other transistor which is located opposite to said point.