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1. (CA2069911) SEMICONDUCTOR DEVICE

Office : Canada
Application Number: 2069911 Application Date:
Publication Number: 2069911 Publication Date: 10.05.1991
Publication Kind : A1
Prior PCT appl.: Application Number:SE1990000678 ; Publication Number: Click to see the data
IPC:
H01L 29/78
H01L 27/06
H01L 27/092
H01L 29/06
H01L 29/49
H01L 29/786
H03K 17/687
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
06
including a plurality of individual components in a non-repetitive configuration
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
08
including only semiconductor components of a single kind
085
including field-effect components only
088
the components being field-effect transistors with insulated gate
092
complementary MIS field-effect transistors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02
Semiconductor bodies
06
characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40
Electrodes
43
characterised by the materials of which they are formed
49
Metal-insulator semiconductor electrodes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
786
Thin-film transistors
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
K
PULSE TECHNIQUE
17
Electronic switching or gating, i.e. not by contact-making and -breaking
51
characterised by the use of specified components
56
by the use, as active elements, of semiconductor devices
687
the devices being field-effect transistors
CPC:
H01L 29/78696
H01L 27/0688
H01L 27/0922
H01L 29/4908
Applicants:
Inventors: SVEDBERG, PER
Priority Data: 8903761-8 09.11.1989 SE
Title: (EN) SEMICONDUCTOR DEVICE
(FR) DISPOSITIF A SEMICONDUCTEUR
Abstract: front page image
(EN) 16 ABSTRACT A semiconductor device, preferably for switching purposes, has a first field effect transistor (31, 32, 33) of enhancement type provided on a substrate (1). The transistor is separated from the substrate by an electrically insulating layer (2). On the transistor an insulating layer (9) is arranged and on this layer a second field effect transistor (51, 52, 53) is provided. The transistors are arranged such that their channel regions (32, 52) cover each other. The source regions (31, 51) and drain regions (33, 53) of the transistors have contacts (311, 511; 331, 531) for connection of control voltages between the source regions mutually and between the drain regions mutually. The transistors are of enhancement type. One of the transistors is of N-type (N-conducting type) and the other transistor is of P-type (P-conducting type). By applying control voltages between the two source contacts mutually and the two drain contacts mutually and of such polarity that the transistor of P-type becomes positive in relation to the transistor of N-type, conducting channels are produced in the confronting surfaces of the channel regions, and the transistors change into conducting state. Further, the component has connections (312, 332) for connection of a load circuit. (Fig. 1)


Also published as:
EP0540516JPH05501479WO/1991/007780