Feedback
Settings

Settings

Goto Application

1. CA2791373 - METHOD FOR PREPARING AN ABSORBER THIN FILM FOR PHOTOVOLTAIC CELLS

PermaLink
Office
Canada
Application Number 2791373
Application Date 17.02.2011
Publication Number 2791373
Publication Date 15.09.2011
Grant Number
Grant Date 02.02.2016
Publication Kind C
IPC
C25D 3/56
CCHEMISTRY; METALLURGY
25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; JOINING WORKPIECES BY ELECTROLYSIS; APPARATUS THEREFOR
3Electroplating; Baths therefor
02from solutions
56of alloys
C23C 28/00
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
28Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of main groups C23C2/-C23C26/173
C25D 5/50
CCHEMISTRY; METALLURGY
25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; JOINING WORKPIECES BY ELECTROLYSIS; APPARATUS THEREFOR
5Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
48After-treatment of electroplated surfaces
50by heat-treatment
H01L 31/18
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
CPC
C25D 3/56
CCHEMISTRY; METALLURGY
25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
3Electroplating: Baths therefor
02from solutions
56of alloys
C25D 3/58
CCHEMISTRY; METALLURGY
25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
3Electroplating: Baths therefor
02from solutions
56of alloys
58containing more than 50% by weight of copper
C25D 9/08
CCHEMISTRY; METALLURGY
25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
9Electrolytic coating other than with metals
04with inorganic materials
08by cathodic processes
H01L 31/0322
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
0256characterised by the material
0264Inorganic materials
032including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
0322comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
H01L 31/0749
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic [PV] conversion devices
06characterised by at least one potential-jump barrier or surface barrier
072the potential barriers being only of the PN heterojunction type
0749including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
Y02E 10/541
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
10Energy generation through renewable energy sources
50Photovoltaic [PV] energy
541CuInSe2 material PV cells
Applicants ELECTRICITE DE FRANCE
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE-CNRS
Priority Data 1051769 11.03.2010 FR
Title
(EN) METHOD FOR PREPARING AN ABSORBER THIN FILM FOR PHOTOVOLTAIC CELLS
(FR) PROCEDE DE PREPARATION D'UNE COUCHE MINCE D'ABSORBEUR POUR CELLULES PHOTOVOLTAIQUES
front page image
Abstract
(FR) Procédé de préparation d'une couche mince d'absorbeur pour cellules photovoltaïques de type A-B-C2 ou A2- (Dx, E1_x) - C4 avec 0= x =1, A est un élément ou un mélange d'éléments choisis dans le groupe 11, B est un élément ou un mélange d'éléments choisis dans le groupe 13, C est un élément ou un mélange d'éléments choisis dans le groupe 16, D est un élément ou un mélange d'éléments choisis dans le groupe 12 et E est un élément ou un mélange d'éléments choisis dans le groupe 14, ledit procédé comprenant : - une étape de dépôt électrochimique (S1) d'oxyde d'éléments choisis parmi les groupes 11, 12, 13, et 14, - une étape de recuit sous atmosphère réductrice (S2), et - une étape d'apport (S3) d'un élément du groupe 16.
Related patent documents
FR2957365
EP2545209
US20130005074
KR1020130009804
AU2011225972
TH131416
WO/2011/110763
JP2013522867
IN7502/DELNP/2012
ID2014/00309
THTH1201004597This application is not viewable in PATENTSCOPE because the national phase entry has not been published yet or the national entry is issued from a country that does not share data with WIPO or there is a formatting issue or an unavailability of the application.
# -