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1. CA2748438 - METHODS OF MAKING COPPER SELENIUM PRECURSOR COMPOSITIONS WITH A TARGETED COPPER SELENIDE CONTENT AND PRECURSOR COMPOSITIONS AND THIN FILMS RESULTING THEREFROM

Office
Canada
Application Number 2748438
Application Date 04.02.2010
Publication Number 2748438
Publication Date 04.08.2011
Publication Kind A1
IPC
C30B 7/06
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
7Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
02by evaporation of the solvent
06using non-aqueous solvents
C23C 26/00
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
26Coating not provided for in groups C23C2/-C23C24/87
CPC
C01G 3/00
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
3Compounds of copper
C01P 2002/72
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
2002Crystal-structural characteristics
70defined by measured X-ray, neutron or electron diffraction data
72by d-values or two theta-values, e.g. as X-ray diagram
C01P 2002/82
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
2002Crystal-structural characteristics
80defined by measured data other than those specified in group C01P2002/70
82by IR- or Raman-data
C01B 19/04
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; ; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
19Selenium; Tellurium; Compounds thereof
04Binary compounds ; including binary selenium-tellurium compounds
Applicants HELIOVOLT CORPORATION
ALLIANCE FOR SUSTAINABLE ENERGY, LLC
Inventors CURTIS, CALVIN J.
MIEDANER, ALEXANDER
LEISCH, JENNIFER
VAN HEST, MARINUS FRANCISCUS ANTONIUS MARIA
GINLEY, DAVID S.
TAYLOR, MATTHEW
STANBERY, BILLY J.
Title
(EN) METHODS OF MAKING COPPER SELENIUM PRECURSOR COMPOSITIONS WITH A TARGETED COPPER SELENIDE CONTENT AND PRECURSOR COMPOSITIONS AND THIN FILMS RESULTING THEREFROM
(FR) PROCEDES DE PREPARATION DE COMPOSITIONS DE PRECURSEURS DE SELENIUM DE CUIVRE AYANT UNE TENEUR DE SELENIURE DE CUIVRE CIBLEE, COMPOSITIONS DE PRECURSEURS ET FILMS MINCES OBTENUS A PARTIR DE CELLES-CI
Abstract
(EN) Precursor compositions containing copper and selenium suitable for deposition on a substrate to form thin films suitable for semi-conductor applications. Methods of forming the precursor compositions using primary amine solvents and methods of forming the thin films wherein the selection of temperature and duration of heating controls the formation of a targeted species of copper selenide.