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1. CA1129002 - NONCONTACTING MEASUREMENT OF HALL EFFECT IN A WAFER

Office
Canada
Application Number 334212
Application Date 21.08.1979
Publication Number 1129002
Publication Date 03.08.1982
Grant Number
Grant Date 03.08.1982
Publication Kind A
IPC
G01R 33/12
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
33Arrangements or instruments for measuring magnetic variables
12Measuring magnetic properties of articles or specimens of solids or fluids
G01R 31/26
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
31Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
26Testing of individual semiconductor devices
H01L 21/66
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
66Testing or measuring during manufacture or treatment
G01R 31/265
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
31Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
26Testing of individual semiconductor devices
265Contactless testing
CPC
G01R 31/265
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
31Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
26Testing of individual semiconductor devices
265Contactless testing
G01R 33/1253
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
33Arrangements or instruments for measuring magnetic variables
12Measuring magnetic properties of articles or specimens of solids or fluids
1253Measuring galvano-magnetic properties
Inventors ROBINSON, DAVID A.H.
MILLER, GABRIEL L.
Priority Data 05935518 21.08.1978 US
Title
(EN) NONCONTACTING MEASUREMENT OF HALL EFFECT IN A WAFER
(FR) MESURE SANS CONTACT DE L'EFFET HALL DANS UNE PLAQUETTE
Abstract
(EN)
NONCONTACTING MEASUREMENT OF HALL EFFECT IN A WAFER Abstract of the Disclosure The magnitude and sign of the Hall angle of the material of a wafer are measured by a combined capacitive and inductive coupling technique which does not require physically contacting the wafer. Contacting methods in common use introduce surface damage or contamination which may reduce the yield of microelectronic circuits on semi- conductor wafers and normally in addition require special sample geometries. In this technique an rf signal is applied to a pair of concentric circular planar electrodes adjacent to the wafer, thus capacitively coupling a radial rf current into the wafer. A magnetic field applied perpendicular to the wafer produces a circular component of rf current because of the Hall effect. This circular rf current produces an axial rf magnetic field which couples to a pickup coil. The pickup signal is amplified and detected to produce an output signal related to the sign and magnitude of the Hall angle of the wafer material.