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1. AU2010330718 - Methods of making copper selenium precursor compositions with a targeted copper selenide content and precursor compositions and thin films resulting therefrom

Office
Australia
Application Number 2010330718
Application Date 04.02.2010
Publication Number 2010330718
Publication Date 18.08.2011
Publication Kind A1
IPC
H01L 31/032
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
0256characterised by the material
0264Inorganic materials
032including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272-H01L31/0312154
C23C 18/08
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
18Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
02by thermal decomposition
08characterised by the deposition of metallic material
CPC
C01G 3/00
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
3Compounds of copper
C01P 2002/72
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
2002Crystal-structural characteristics
70defined by measured X-ray, neutron or electron diffraction data
72by d-values or two theta-values, e.g. as X-ray diagram
C01P 2002/82
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
2002Crystal-structural characteristics
80defined by measured data other than those specified in group C01P2002/70
82by IR- or Raman-data
C01B 19/04
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; ; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
19Selenium; Tellurium; Compounds thereof
04Binary compounds ; including binary selenium-tellurium compounds
Applicants HelioVolt Corporation
National Renewable Energy Laboratory
Inventors Curtis, Calvin J.
Ginley, David S.
Leisch, Jennifer
Miedaner, Alexander
Stanbery, Billy J.
Taylor, Matthew
Van Hest, Marinus Franciscus Antonius Maria
Agents Pizzeys Patent and Trade Mark Attorneys Pty Ltd
Title
(EN) Methods of making copper selenium precursor compositions with a targeted copper selenide content and precursor compositions and thin films resulting therefrom
Abstract
(EN) Precursor compositions containing copper and selenium suitable for deposition on a substrate to form thin films suitable for semi-conductor applications. Methods of forming the precursor compositions using primary amine solvents and methods of forming the thin films wherein the selection of temperature and duration of-heating-controls the formation of a targeted species of copper selenide.