AU2010330718 Methods of making copper selenium precursor compositions with a targeted copper selenide content and precursor compositions and thin films resulting therefrom

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Application Number 2010330718

Application Date 04.02.2010

Publication Number 2010330718

Publication Date 18.08.2011

Publication Kind A1

IPC

CPC

Applicants HelioVolt Corporation
National Renewable Energy Laboratory

Inventors Curtis, Calvin J.
Ginley, David S.
Leisch, Jennifer
Miedaner, Alexander
Stanbery, Billy J.
Taylor, Matthew
Van Hest, Marinus Franciscus Antonius Maria

Agents Pizzeys Patent and Trade Mark Attorneys Pty Ltd

Title

(EN) Methods of making copper selenium precursor compositions with a targeted copper selenide content and precursor compositions and thin films resulting therefrom

Abstract

(EN) Precursor compositions containing copper and selenium suitable for deposition on a substrate to form thin films suitable for semi-conductor applications. Methods of forming the precursor compositions using primary amine solvents and methods of forming the thin films wherein the selection of temperature and duration of-heating-controls the formation of a targeted species of copper selenide.

H	ELECTRICITY
01	BASIC ELECTRIC ELEMENTS
L	SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31	Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248	characterised by their semiconductor bodies
0256	characterised by the material
0264	Inorganic materials
032	including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272-H01L31/0312154

C	CHEMISTRY; METALLURGY
23	COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C	COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
18	Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
02	by thermal decomposition
08	characterised by the deposition of metallic material

H	ELECTRICITY
01	BASIC ELECTRIC ELEMENTS
L	SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31	Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248	characterised by their semiconductor bodies
0256	characterised by the material
0264	Inorganic materials
032	including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272-H01L31/0312154

C	CHEMISTRY; METALLURGY
23	COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C	COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
18	Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
02	by thermal decomposition
08	characterised by the deposition of metallic material

C	CHEMISTRY; METALLURGY
01	INORGANIC CHEMISTRY
G	COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
3	Compounds of copper

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1. AU2010330718 - Methods of making copper selenium precursor compositions with a targeted copper selenide content and precursor compositions and thin films resulting therefrom

C	CHEMISTRY; METALLURGY
01	INORGANIC CHEMISTRY
P	INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
2002	Crystal-structural characteristics
70	defined by measured X-ray, neutron or electron diffraction data
72	by d-values or two theta-values, e.g. as X-ray diagram

C	CHEMISTRY; METALLURGY
01	INORGANIC CHEMISTRY
B	NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; ; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
19	Selenium; Tellurium; Compounds thereof
04	Binary compounds ; including binary selenium-tellurium compounds