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1. AU2001290735 - Tunable focus ring for plasma processing

Office
Australia
Application Number 2001290735
Application Date 12.09.2001
Publication Number 2001290735
Publication Date 06.12.2001
Publication Kind A
IPC
H01J 37/32
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes
C23C 16/00
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
H01L 21/306
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
Applicants Tokyo electron Limited
Inventors Johnson, Wayne L.
Priority Data 60233623 18.09.2000 US
Title
(EN) Tunable focus ring for plasma processing
Abstract
(EN)
A focus ring (200) and related assembly for a plasma reactor system (100, 400) for processing a workpiece (176) having an outer edge and an upper surface. The assembly has a focus ring support surface (173) arranged around the workpiece perimeter and a ring electrode (210) arranged atop the focus ring support surface. An insulating focus ring (200) is arranged atop the ring electrode. In one embodiment, a first RF power supply (1890) is electrically connected to the focus ring electrode and a tuning network (220) is arranged between the first RF power supply and the ring electrode. Methods of forming a plasma (130) and processing a workpiece in an optimized way, as well as a plasma reactor system for accomplishing the same, are also disclosed.

Also published as
US10378992