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1. (AU1998073794) Improved laser cutting methods

Office : Australia
Application Number: 73794/98 Application Date: 12.05.1998
Publication Number: 1998073794 Publication Date: 28.01.1999
Publication Kind : A
Prior PCT appl.: Application Number:US1998009595 ; Publication Number: Click to see the data
IPC:
H01S 3/11
B23K 26/06
B23K 26/16
H01L 21/304
H01S 3/115
H01S 3/127
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
3
Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
10
Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
11
in which the quality factor of the optical resonator is rapidly changed, i.e. giant-pulse technique
B PERFORMING OPERATIONS; TRANSPORTING
23
MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
K
SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
26
Working by laser beam, e.g. welding, cutting, boring
02
Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
06
Shaping the laser beam, e.g. by masks or multi-focusing
B PERFORMING OPERATIONS; TRANSPORTING
23
MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
K
SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
26
Working by laser beam, e.g. welding, cutting, boring
16
Removing of by-products, e.g. particles or vapours produced during treatment of a workpiece
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304
Mechanical treatment, e.g. grinding, polishing, cutting
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
3
Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
10
Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
11
in which the quality factor of the optical resonator is rapidly changed, i.e. giant-pulse technique
115
using an electro-optical device
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
3
Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
10
Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
11
in which the quality factor of the optical resonator is rapidly changed, i.e. giant-pulse technique
127
Plural Q-switches
CPC:
B23K 26/032
B23K 26/06
B23K 26/064
B23K 26/0643
B23K 26/0648
B23K 26/0665
B23K 26/16
H01L 21/304
H01S 3/08054
H01S 3/1127
H01S 3/115
H01S 3/127
Applicants: Dahm, Jonathan S.
Inventors: Dahm, Jonathan S.
Priority Data: 08854813 12.05.1997 US
08854814 12.05.1997 US
Title: (EN) Improved laser cutting methods
Abstract:
(EN) Disclosed are methods of cutting a substrate including the acts of providing laser (100) that produces a stream of light pulses, illuminating a surface of substrate (104, 102) with the stream of light pulses, and propagating a cutting surface created on substrate (104, 102) by the streams of light pulses, with a heatwave and a shockwave emanating from the cutting surface and vaporized substrate (104, 102) material present near the cutting surface, substantially all of the pulses having both arise time to pulse length ratio sufficiently small enough and a fluence sufficiently large to enable the heatwave to travel sufficiently faster than the shockwave to promote removal of the vaporized material from the cutting surface. Also disclosed are methods for laser (100) separation of substrate (104, 102) including the acts of illuminating substrate (102, 104) with a stream of light pulses having a pulse repetition frequency ranging from about five hundred kilohertz to about five megahertz, rise time less than five hundred picoseconds and duration ranging from about fifty picoseconds to about five hundred nanoseconds.
Also published as:
WO/1998/052258