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1. US20080293165 - Method for manufacturing non-volatile magnetic memory

Office United States of America
Application Number 12040827
Application Date 29.02.2008
Publication Number 20080293165
Publication Date 27.11.2008
Grant Number 08535952
Grant Date 17.09.2013
Publication Kind B2
IPC
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L 21/00
Applicants Ranjan Rajiv Yadav
Avalanche Technology, Inc.
Keshtbod Parviz
Malmhall Roger Klas
Inventors Ranjan Rajiv Yadav
Keshtbod Parviz
Malmhall Roger Klas
Agents Imam Maryam
IPxLAW Group LLP
Title
(EN) Method for manufacturing non-volatile magnetic memory
Abstract
(EN)

In accordance with a method of the present invention, a method of manufacturing a magnetic random access memory (MRAM) cell and a corresponding structure thereof are disclosed to include a multi-stage manufacturing process. The multi-stage manufacturing process includes performing a front end on-line (FEOL) stage to manufacture logic and non-magnetic portions of the memory cell by forming an intermediate interlayer dielectric (ILD) layer, forming intermediate metal pillars embedded in the intermediate ILD layer, depositing a conductive metal cap on top of the intermediate ILD layer and the metal pillars, performing magnetic fabrication stage to make a magnetic material portion of the memory cell being manufactured, and performing back end on-line (BEOL) stage to make metal and contacts of the memory cell being manufactured.