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1. (US20050055497) Faster write operations to nonvolatile memory using FSInfo sector manipulation
Office : United States of America
Application Number: 10741129 Application Date: 19.12.2003
Publication Number: 20050055497 Publication Date: 10.03.2005
Grant Number: 08171203 Grant Date: 01.05.2012
Publication Kind : B2
IPC:
G06F 12/00
G06F 12/02
G06F 3/06
G06F 11/10
G11C 8/00
G11C 8/12
G11C 16/06
G11C 16/08
G11C 16/10
G11C 29/00
G PHYSICS
06
COMPUTING; CALCULATING; COUNTING
F
ELECTRIC DIGITAL DATA PROCESSING
12
Accessing, addressing or allocating within memory systems or architectures
G PHYSICS
06
COMPUTING; CALCULATING; COUNTING
F
ELECTRIC DIGITAL DATA PROCESSING
12
Accessing, addressing or allocating within memory systems or architectures
02
Addressing or allocation; Relocation
G PHYSICS
06
COMPUTING; CALCULATING; COUNTING
F
ELECTRIC DIGITAL DATA PROCESSING
3
Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
06
Digital input from, or digital output to, record carriers
G PHYSICS
06
COMPUTING; CALCULATING; COUNTING
F
ELECTRIC DIGITAL DATA PROCESSING
11
Error detection; Error correction; Monitoring
07
Responding to the occurrence of a fault, e.g. fault tolerance
08
Error detection or correction by redundancy in data representation, e.g. by using checking codes
10
Adding special bits or symbols to the coded information, e.g. parity check, casting out nines or elevens
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
8
Arrangements for selecting an address in a digital store
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
8
Arrangements for selecting an address in a digital store
12
Group selection circuits, e.g. for memory block selection, chip selection, array selection
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
16
Erasable programmable read-only memories
02
electrically programmable
06
Auxiliary circuits, e.g. for writing into memory
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
16
Erasable programmable read-only memories
02
electrically programmable
06
Auxiliary circuits, e.g. for writing into memory
08
Address circuits; Decoders; Word-line control circuits
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
16
Erasable programmable read-only memories
02
electrically programmable
06
Auxiliary circuits, e.g. for writing into memory
10
Programming or data input circuits
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
29
Checking stores for correct operation; Testing stores during standby or offline operation
Applicants: Micron Technology, Inc.
Inventors: Estakhri Petro
Nemazie Sam
Agents: Leffert Jay & Polglaze, P.A.
Priority Data:
Title: (EN) Faster write operations to nonvolatile memory using FSInfo sector manipulation
Abstract: front page image
(EN)

An embodiment of the present invention includes a digital equipment system having a host for sending write commands to write files having sector information and having a controller device responsive to the commands for writing and updating FSInfo sector information. The controller controls a nonvolatile memory system organized into blocks, each block including a plurality of sector locations for storing sector information, a particular free block, designated for storing FSInfo sector information. Upon updating of the FSInfo sector, the updated FSInfo sector information is written to a next free sector of the dedicated block thereby avoiding moving the sectors of the particular block to another block, hence, improving system performance.