Processing

Please wait...

Settings

Settings

Goto Application

1. KR1020060123313 - METHOD AND APPARATUS FOR MATERIAL DEPOSITION

Office
Republic of Korea
Application Number 1020067011581
Application Date 12.06.2006
Publication Number 1020060123313
Publication Date 01.12.2006
Grant Number 1012334440000
Grant Date 14.02.2013
Publication Kind B1
IPC
C23C 18/16
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
18Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
16by reduction or substitution, i.e. electroless plating
C23C 18/54
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
18Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
54Contact plating, i.e. electroless electrochemical plating
Applicants LAM RESEARCH CORPORATION
램 리써치 코포레이션
Inventors DORDI YEZDI
도르디 예즈디
BOYD JOHN
보이드 존
THIE WILLIAM
티 윌리엄
MARASCHIN BOB
마라스친 밥
REDEKER FRED C.
레데커 프레드 씨
COOK JOEL M.
쿡 조엘 엠
Agents 특허법인코리아나
Title
(EN) METHOD AND APPARATUS FOR MATERIAL DEPOSITION
(KO) 재료 증착을 위한 방법 및 장치
Abstract
(EN)

A method and an apparatus are provided for selective heating of a surface of a wafer exposed to an electroless plating solution. Selective heating by a radiant energy source causes a temperature increase at an interface between the wafer surface and the electroless plating solution. This temperature increase causes a plating reaction to occur at the wafer surface. Thus, material is deposited on the wafer surface through an electroless plating reaction that is initiated and controlled by varying the temperature of the wafer surface using an appropriately defined radiant energy source. Additionally, a planar member can be positioned over and proximate to the wafer surface to entrap electroless plating solution between the planar member and the wafer surface. Material deposited through the plating reactions forms a planarizing layer that conforms to a planarity of the planar member.

© KIPO & WIPO 2007

(KO)
무전해 도금액에 노출된 웨이퍼 표면의 선택적인 가열을 위한 방법 및 장치가 제공된다. 복사 에너지원에 의한 선택적인 가열은 웨이퍼 표면과 무전해 도금액 사이의 계면에서 온도 증가를 유발한다. 이러한 온도 증가는 웨이퍼 표면에서 도금 반응이 발생하게 한다. 따라서, 적절히 규정된 복사 에너지원을 이용하여, 웨이퍼 표면의 온도를 변화시킴으로써 개시 및 제어되는 무전해 도금 반응을 통해 재료가 웨이퍼 표면 상에 증착된다. 또한, 평면 부재가 웨이퍼 표면 위에 근접하게 위치되어 평면 부재와 웨이퍼 표면 사이에 무전해 도금액을 인트랩할 수 있다. 도금 반응을 통해 증착된 재료는 평면 부재의 평탄성에 따르는 평탄화 레이어를 형성한다.