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1. KR1020120066434 - METHOD FOR MANUFACTURING A SILVER NANO WIRE USING PLASMA SPUTTERING AND ANODIC ALUMINUM OXIDE

Office Republic of Korea
Application Number 1020100127783
Application Date 14.12.2010
Publication Number 1020120066434
Publication Date 22.06.2012
Grant Number 1012020170000
Grant Date 16.11.2012
Publication Kind B1
IPC
C23C 14/34
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
34Sputtering
C25D 11/04
CCHEMISTRY; METALLURGY
25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; JOINING WORKPIECES BY ELECTROLYSIS; APPARATUS THEREFOR
11Electrolytic coating by surface reaction, i.e. forming conversion layers
02Anodisation
04of aluminium or alloys based thereon
B82B 3/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
BNANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
3Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
CPC
C23C 14/34
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
34Sputtering
C25D 11/04
CCHEMISTRY; METALLURGY
25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING
11Electrolytic coating by surface reaction, i.e. forming conversion layers
02Anodisation
04of aluminium or alloys based thereon
B82B 3/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
BNANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
3Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
C23C 14/081
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
06characterised by the coating material
08Oxides
081of aluminium, magnesium or beryllium
C23C 14/5806
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
58After-treatment
5806Thermal treatment
H01L 21/203
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth ; solid phase epitaxy
203using physical deposition, e.g. vacuum deposition, sputtering
Applicants KOREA INSTITUTE OF CERAMIC ENGINEERING AND TECHNOLOGY
한국세라믹기술원
Inventors JEONG, BONG YONG
정봉용
LIM, JAE HOON
임재훈
CHANG, JEONG HO
장정호
Agents 반중혁
Title
(EN) METHOD FOR MANUFACTURING A SILVER NANO WIRE USING PLASMA SPUTTERING AND ANODIC ALUMINUM OXIDE
(KO) 플라즈마 스퍼터링을 이용한 은 나노 와이어의 제조 방법
Abstract
(EN)
PURPOSE: A method for manufacturing silver nano wire using plasma sputtering is provided to obtain silver nano wires with a uniform size and minimize the affects of manufacturing conditions. CONSTITUTION: A method for manufacturing silver nano wire using plasma sputtering comprises the steps of: performing plasma sputtering using silver as a sputter target on anodic aluminum oxide(S102), heat-treating the anodic aluminum oxide(S014), melting the anodic aluminum oxide, and forming the molten anodic aluminum oxide into a template. COPYRIGHT KIPO 2012

(KO)
플라즈마 스퍼터링을 이용한 은 나노 와이어의 제조 방법이 개시된다. 본 발명의 바람직한 일 실시예에 따르면, 알루미늄 양극 산화물에 은을 스퍼터 타겟으로 하여 플라즈마 스퍼터링(plasma sputtering)을 수행한 후, 알루미늄 양극 산화물을 열처리하여, 열처리된 알루미늄 양극 산화물을 용해하는 은 나노 와이어의 제조 방법이 제공된다. 본 발명에 따르면, 보다 균일한 크기의 은 나노 와이어를 제조할 수 있고, 또한, 은 나노 와이어의 제조 조건에 영향을 최소로 받는 장점이 있다. 그리고 보다 작은 크기를 가지는 은 나노 와이어를 제조할 수 있으며, 따라서 은 나노 와이어가 이용될 수 있는 분야가 제한되지 않는 장점이 있다.