Processing

Please wait...

Settings

Settings

Goto Application

1. JP2005526184 - スパッタ・デポジション工程を制御するためのシステムおよび方法

Office Japan
Application Number 2004505405
Application Date 16.05.2003
Publication Number 2005526184
Publication Date 02.09.2005
Grant Number 4694833
Grant Date 04.03.2011
Publication Kind B2
IPC
C23C 14/34
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
34Sputtering
H05H 1/46
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY- CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
1Generating plasma; Handling plasma
24Generating plasma
46using applied electromagnetic fields, e.g. high frequency or microwave energy
CPC
C23C 14/35
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
34Sputtering
35by application of a magnetic field, e.g. magnetron sputtering
H01J 37/3405
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
34operating with cathodic sputtering
3402using supplementary magnetic fields
3405Magnetron sputtering
Applicants アプライド、マテリアルズ、インク
Inventors ストウェル,マイクル,ダブルュー,ジューニァ
Agents 真田 雄造
中島 宣彦
尾原 静夫
Priority Data 10438380 15.05.2003 US
60/381,482 17.05.2002 US
Title
(JA) スパッタ・デポジション工程を制御するためのシステムおよび方法
Abstract
(JA)

パルスDC電源およびRF電源の両方が電力をスパッタ・デポジション装置に印加するスパッタ・デポジションのための方法および装置。パルスDC電源はターゲットに電力が印加されるオン・サイクルおよび逆極性がターゲットに印加されるオフ・サイクルを提供する。逆性の印加は、ターゲットの表面上に蓄積するかもしれない電荷を除去する効果を有する。この効果は、基板上に蒸着される膜の品質を劣化させ得るアークがターゲットの表面上に発生する可能性を低減させる。パルスDC電力と同時にEF電力をターゲットに印加することによって、ターゲット表面上のイオン化効率が増大される。これにより、結果的にターゲット表面からより速く除去される材料の量はより多くなる。