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1. JP2006013434 - THERMOELECTRIC TRANSDUCER MODULE, ITS AGGREGATE, AND METHOD FOR MANUFACTURING THEM

Office Japan
Application Number 2005081524
Application Date 22.03.2005
Publication Number 2006013434
Publication Date 12.01.2006
Grant Number 4412209
Grant Date 27.11.2009
Publication Kind B2
IPC
H01L 35/32
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
28operating with Peltier or Seebeck effect only
32characterised by the structure or configuration of the cell or thermo-couple forming the device
H01L 23/38
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
34Arrangements for cooling, heating, ventilating or temperature compensation
38Cooling arrangements using the Peltier effect
H01L 35/34
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
34Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
CPC
H01L 2924/0002
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2924Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
0001Technical content checked by a classifier
0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Applicants MATSUSHITA ELECTRIC WORKS LTD
パナソニック電工株式会社
Inventors WATANABE TOMOHARU
渡邉 智治
YOSHIOKA KOICHI
吉岡 浩一
KOBAYASHI KENTARO
小林 健太郎
Agents 小谷 悦司
伊藤 孝夫
樋口 次郎
Priority Data 2004152362 21.05.2004 JP
Title
(EN) THERMOELECTRIC TRANSDUCER MODULE, ITS AGGREGATE, AND METHOD FOR MANUFACTURING THEM
(JA) 熱電変換素子モジュールの製造方法
Abstract
(EN)

PROBLEM TO BE SOLVED: To provide an inexpensive thermoelectric transducer module high in thermoelectric conversion efficiency, its aggregate, and a method for manufacturing them.

SOLUTION: The thermoelectric transducer module 10B is composed so that one face is joined to a first electrode 3, the other face is joined to a second electrode 6, and p-type and n-type thermoelectric transducers 1p, 1n are alternately electrically connected in series. A first insulating sheet piece 2, to which a first through-hole 2a is formed, is provided. The first electrode 3 is joined to a face of one side of the first insulating sheet piece 2 so as to cover the first through-hole 2a. One faces of the thermoelectric transducers 1p, 1n are joined to the first electrode 3 from the first through-hole 2a of the first insulating sheet piece 2.

COPYRIGHT: (C)2006,JPO&NCIPI

(JA)

【課題】 熱電変換効率が高く安価な熱電変換素子モジュールおよびその集合体並びにこれらの製造方法を提供する。
【解決手段】 一方の面が第1電極3に接合され、他方の面が第2電極6に接合されて、p型およびn型の熱電変換素子1p,1nが交互に電気的に直列に接続された熱電変換素子モジュール10Bにおいて、第1貫通孔2aが形成された第1絶縁シート片2を設け、第1電極3を、第1絶縁シート片2の片側の面に第1貫通孔2aを覆うように接合し、熱電変換素子1p,1nの一方の面を、上記第1絶縁シート片2の第1貫通孔2aから第1電極3に接合した。
【選択図】 図8