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1. CN104733501 - Pixel structure, display device and manufacturing method for pixel structure

Office China
Application Number 201510079940.9
Application Date 13.02.2015
Publication Number 104733501
Publication Date 24.06.2015
Grant Number 104733501
Grant Date 15.06.2018
Publication Kind B
IPC
H01L 27/32
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
32with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes
H01L 51/52
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
52Details of devices
H01L 51/56
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
56Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
CPC
H01L 51/5271
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
52Details of devices
5262Arrangements for extracting light from the device
5271Reflective means
H01L 27/32
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
32with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes [OLED]
H01L 27/3246
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
32with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes [OLED]
3241Matrix-type displays
3244Active matrix displays
3246Pixel defining structures, e.g. banks
H01L 27/3283
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
32with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes [OLED]
3241Matrix-type displays
3281Passive matrix displays
3283including banks or shadow masks
H01L 51/001
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
0001Processes specially adapted for the manufacture or treatment of devices or of parts thereof
0002Deposition of organic semiconductor materials on a substrate
0008using physical deposition, e.g. sublimation, sputtering
001Vacuum deposition
H01L 51/0011
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
0001Processes specially adapted for the manufacture or treatment of devices or of parts thereof
0002Deposition of organic semiconductor materials on a substrate
0008using physical deposition, e.g. sublimation, sputtering
0011selective deposition, e.g. using a mask
Applicants 京东方科技集团股份有限公司
Inventors 皇甫鲁江
马文昱
高昕伟
李良坚
张粲
Agents 中科专利商标代理有限责任公司 11021
Title
(EN) Pixel structure, display device and manufacturing method for pixel structure
(ZH) 像素结构、显示装置以及像素结构的制作方法
Abstract
(EN)
The invention discloses a pixel structure, a display device with the pixel structure and a manufacturing method for the pixel structure. The pixel structure comprises a first insulation layer, a light emitting unit, a pixel defining layer and a reflection assembly, wherein the light emitting unit is arranged on the first insulation layer and comprises a first electrode layer, a light emitting layer and a second electrode layer; the pixel defining layer is manufactured to be used for defining a pixel opening and the light emitting unit is arranged in the pixel opening; the pixel defining layer is surrounded by the reflection assembly and light emitted to the pixel defining layer from the light emitting layer in an incident mode is reflected so as to be emitted from an emergent face of the pixel structure. Through the arrangement of the reflection assembly, light emitted to the pixel defining layer from the light emitting layer in the incident mode is reflected so as to be emitted from the emergent face of the pixel structure so that light beams emitted to the pixel defining layer in an incident mode can be converted into effective light beams of the pixel structure, the display effect is improved, and light consumption is reduced.

(ZH)
公开了一种像素结构、具有这种像素结构的显示装置、以及像素结构的制作方法。像素结构,包括:第一绝缘层;发光单元,设置在所述第一绝缘层上,并包括第一电极层、发光层和第二电极层;像素界定层,被构造成用于限定像素开口,所述发光单元设置在所述像素开口中;以及反射组件,环绕所述像素界定层设置,以将从所述发光层入射到所述像素界定层中的光反射成从所述像素结构的出射面射出。通过设置反射组件,使得从所述发光层入射到所述像素界定层中的光反射成从所述像素结构的出射面射出,这样入射到像素界定层中的光束可以转换成像素结构的有效光束,提高显示效果,降低光消耗。

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