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1. WO2020141850 - HYDROCARBON THIN FILM, METHOD OF PREPARING HYDROCARBON THIN FILM, AND SEMICONDUCTOR DEVICE COMPRISING HYDROCARBON THIN FILM

Publication Number WO/2020/141850
Publication Date 09.07.2020
International Application No. PCT/KR2019/018783
International Filing Date 31.12.2019
IPC
H01L 21/02 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/324 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
324Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
H01L 21/8234 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8232Field-effect technology
8234MIS technology
H01L 29/10 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
10with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
CPC
H01L 21/02
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/324
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
324Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
H01L 21/8234
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8232Field-effect technology
8234MIS technology ; , i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
H01L 29/10
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions
10with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
Applicants
  • 충남대학교산학협력단 THE INDUSTRY & ACADEMIC COOPERATION IN CHUNGNAM NATIONAL UNIVERSITY (IAC) [KR]/[KR]
  • 울산과학기술원 ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY (UNIST) [KR]/[KR]
Inventors
  • 김의태 KIM, Eui Tae
  • 김동욱 KIM, Dong Ok
  • 이종훈 LEE, Zong Hoon
Agents
  • 원대규 WON, Dae Gyu
Priority Data
10-2018-017352231.12.2018KR
10-2019-017644327.12.2019KR
Publication Language Korean (ko)
Filing Language Korean (KO)
Designated States
Title
(EN) HYDROCARBON THIN FILM, METHOD OF PREPARING HYDROCARBON THIN FILM, AND SEMICONDUCTOR DEVICE COMPRISING HYDROCARBON THIN FILM
(FR) FILM MINCE D'HYDROCARBURES, PROCÉDÉ DE PRÉPARATION DE FILM MINCE D'HYDROCARBURES ET DISPOSITIF À SEMI-CONDUCTEURS COMPRENANT UN FILM MINCE D'HYDROCARBURES
(KO) 탄화수소 박막, 탄화수소 박막의 제조방법 및 탄화수소 박막을 포함하는 반도체 소자
Abstract
(EN) The present invention relates to a hydrocarbon thin film, a method of preparing same, and a semiconductor device using same, wherein the hydrocarbon thin film shows desirable uniformity as a thin film while having a significantly higher dielectric constant than that of a SiO2 thin film or a Hf- or Zr-based oxide thin film; and has an extremely low leakage current and a high dielectric strength, and thus can be applied to a semiconductor device of 10 nm node or less and achieve a desirable performance. In particular, the hydrocarbon thin film has an amorphous structure; and has a dielectric constant of 10 or more, wherein a ratio of relative intensities between hydrogen and carbon as measured by secondary-ion mass spectrometry (SIMS) is in the range of 4 to 30, and on C 1s spectra of X-ray photoelectron spectroscopy (XPS), a binding energy peak present between 280 eV to 290 eV has a binding energy (eV) shift of 0.5 eV or less between before and after a surface treatment using 1 keV argon (Ar+) plasma etching under any one of time conditions in the range of 5 seconds to 20 seconds.
(FR) La présente invention concerne un film mince d'hydrocarbures, son procédé de préparation et un dispositif à semi-conducteurs utilisant celui-ci, le film mince d'hydrocarbures présentant une uniformité souhaitable en tant que film mince tout en présentant une constante diélectrique significativement supérieure à celle d'un film mince de SiO2 ou d'un film mince d'oxyde à base de Hf ou de Zr; et présentant un courant de fuite extrêmement faible et une résistance diélectrique élevée et pouvant ainsi être appliqué à un dispositif à semi-conducteurs d'un nœud inférieur ou égal à 10 nm et obtenir des performances souhaitables. En particulier, le film mince d'hydrocarbures a une structure amorphe; et présente une constante diélectrique supérieure ou égale à 10, un rapport d'intensités relatives entre l'hydrogène et le carbone mesuré par spectrométrie de masse d'ions secondaires (SIMS) étant situé dans la plage de 4 à 30, et sur des spectres C1s de spectroscopie photoélectronique à rayons X (XPS), un pic d'énergie de liaison présent entre 280 eV et 290 eV ayant un décalage d'énergie de liaison (eV) inférieur ou égal à 0,5 eV entre avant et après un traitement de surface à l'aide d'une gravure par plasma d'argon (Ar+) de 1 keV dans n'importe laquelle des conditions temporelles dans la plage de 5 secondes à 20 secondes.
(KO) 고유전성을 바탕으로 SiO 2 박막은 물론 Hf 또는 Zr 기반의 산화물 박막보다도 유전상수가 현저히 높으면서도 박막의 균일성이 우수하고, 동시에 누설전류가 매우 낮고, 높은 유전강도 특성을 나타내어 10nm 노드 이하의 반도체 소자에 적용되어 우수한 성능을 구현할 수 있는 탄화수소 박막으로서, 비정질 구조를 갖고, 유전상수가 10 이상이며, 수소와 탄소의 이차이온 질량분석(SIMS: secondary-ion mass spectrometry) 상대 강도 비가 4 내지 30이고, XPS(X-ray photoelectron spectroscopy)의 탄소 1s 스펙트럼 상 280eV 내지 290eV 중에 존재하는 결합 에너지 피크(peak)가 1keV 세기의 아르곤(Ar+) 플라즈마 에칭으로 5초 내지 20초 중 어느 하나의 시간 조건 하에서 표면 처리한 전후의 결합 에너지(eV) 이동폭이 0.5eV 이하인 탄화수소 박막 및 이의 제조방법과 이를 적용한 반도체 소자를 제공한다.
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